2N4923G Allicdata Electronics
Allicdata Part #:

2N4923GOS-ND

Manufacturer Part#:

2N4923G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 1A TO225AA
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 3MHz 30W Throu...
DataSheet: 2N4923G datasheet2N4923G Datasheet/PDF
Quantity: 539
Stock 539Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: 2N4923
Description

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The 2N4923G is a long tail pair NPN, bipolar junction transistor (BJT). Being part of the BJT family of transistors, it is a semiconductor device with three terminals and a current controlled switch. It operates by modulation of the base current to regulate the amount of current leaving the emitter. The 2N4923G has been designed for use in general purpose switching and amplifier applications.

The device is a medium power linear switching transistor with excellent high speed switching capabilities and is suitable for use in a variety of applications including, but not limited to, motor control and switching circuits, low noise amplifiers, and signal switching.

The 2N4923G is manufactured using BJTs, also known as junction-type transistors, which are composed of three regions of semiconductor material. The primary parts of a BJT are the base-emitter junction, the base-collector junction, and the collector region. When a current flows through the emitter of a BJT, it undergoes a process known as avalanche breakdown, which generates a stream of electrons between the base and the collector, thus causing a current to flow through the collector.

The collector current passes through the collector load connected to the collector terminal, and a portion of it flows through the base-collector junction and activates the base-emitter junction. This in turn renders the BJT in an "on" mode state and allows current to flow through the emitter-collector junction, thus enabling the transistor to control the collector current. The amount of collector current is dependent on the base current.

The main parameters of the 2N4923G include its maximum collector-emitter voltage, which is rated at 40 volts; the collector-base voltage, which is rated at 40 volts; the on-state current, which is rated at 47 amps; and the on-state resistance, which is rated at 1 ohm. The device also features protection against thermal or electrical overloads and short-circuit currents. Additionally, it has a collector-emitter saturation voltage of 0.56 volts and a turn-on and turn-off time of 40 nS. The maximum power dissipation for this device is 175 mW and its maximum junction temperature is 150°C.

The typical application fields for the 2N4923G are switching and amplifying. This device can be used as an amplifier in communication systems, analog amplifiers, and active filters. In addition, it has a low noise figure and can be used in both low-level and high-level switching circuits. The device is also useful for motor control and switching circuits, audio amplifiers, and high-speed logic systems.

In summary, the 2N4923G is a versatile medium power linear switching transistor that is used in many general-purpose switching and amplifier applications. Its main characteristics include its collector-emitter voltage rating of 40 volts and its on-state current rating of 47 amps. It can be used in various circuits or applications, ranging from communication systems and analog amplifiers to motor control and switching circuits.

The specific data is subject to PDF, and the above content is for reference

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