2N4906 Allicdata Electronics
Allicdata Part #:

2N4906-ND

Manufacturer Part#:

2N4906

Price: $ 27.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN SILICON TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N4906 datasheet2N4906 Datasheet/PDF
Quantity: 1000
100 +: $ 24.87580
Stock 1000Can Ship Immediately
$ 27.37
Specifications
Series: *
Part Status: Active
Description

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The 2N4906 is a Bipolar Junction Transistor (BJT) used for general purpose amplification and switching applications. This PNP device has a maximum voltage rating of 40V, collector current rating of 80mA, and power dissipation rating up to 625mW. This robust transistor is capable of operating in temperatures ranging from -55°C to +150°C. It is available in a TO-92 package with pins for the Emitter, Base and Collector.

2N4906 is suitable for use in low voltage, low power amplifier circuits and switching applications. It can be used in amplifiers, switches or as a current regulator. It is commonly used in low voltage, low current applications such as motor control, audio amplifiers, emitter followers, voltage regulators, and light emitting diodes (LED) drivers.

The working principle of the PNP 2N4906 transistor is based on the fact that the flow of current through a PNP transistor is controlled by the voltage applied to its base. When the base voltage is low, the flow of current from collector to emitter is stopped. When the base voltage is increased, the flow of current begins to increase. This type of junction transistor is essentially two back-to-back diodes connected in a common base configuration.

When the Base-Emitter junction is forward biased, electrons are injected from the emitter into the base region, creating a region of excess electrons underneath the base. This allows current to flow from emitter to collector, allowing the transistor to act as an amplifier or switch. When the Base-Emitter junction is reverse-biased, it acts in the opposite manner to prevent current flow.

When considering the application of the 2N4906, it is important to consider the electrical parameters of the device. It has a small signal current gain (Beta) of 50 at 1mβ, a transition frequency of 950MHz and a collector-emitter voltage rating (Vce) of 40V. Its breakdown voltage (Vbr) is greater than 40V, which makes it ideal for low voltage, low power applications with a high degree of reliability.

The 2N4906 is a reliable and robust transistor that is suitable for many general purpose applications. It is capable of operating at temperatures from -55°C to +150°C and is relatively inexpensive to source. It is rated for collector current of 80mA and can be used in low power, low voltage circuits. It has a small signal gain (Beta) of 50 and a transition frequency of 950MHz, making it suitable for use in audio amplifiers, switches, voltage regulators and LED drivers.

The specific data is subject to PDF, and the above content is for reference

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