2PB1219AR,115 Allicdata Electronics
Allicdata Part #:

2PB1219AR,115-ND

Manufacturer Part#:

2PB1219AR,115

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 50V 0.5A SOT323
More Detail: Bipolar (BJT) Transistor PNP 50V 500mA 120MHz 200m...
DataSheet: 2PB1219AR,115 datasheet2PB1219AR,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02967
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: 2PB1219
Description

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The 2PB1219AR,115 Transistors - Bipolar (BJT) - Single is a popular transistor in its class. This transistor is encapsulated in a TO-92-type three-pin plastic package. A feature of this transistor is its high current transfer ratio and wide dynamic range. It is designed for use in switching, current-gain control and low-noise applications.

The 2PB1219AR,115 is an NPN transistor with its base, emitter and collector pins arranged along the marked side of the package. The emitter is to the right of the collector in the package, and the base is to the left of the collector. It is capable of operating with a wide range of currents and with a relatively low leakage current. It has a high current gain and has a very low saturation voltage. It is also extremely stable during warm-up and operation.

The 2PB1219AR,115 is used in many applications including switching, current-gain control, low-noise low power control, broadband amplifiers, and audio circuit applications. It is suitable for use in a variety of digital and analog applications where high current gains and low saturation voltages are desired.

The working principle of the 2PB1219AR,115 is based on the behavior of a diode. When a current is applied to the base, a voltage drop is created between the base and the emitter. This voltage drop is multiplied by the current gain of the transistor, resulting in a larger voltage drop between the emitter and the collector. The resulting current that then flows through the collector is proportional to the current applied to the base.

The 2PB1219AR,115 is a widely used and reliable transistor that finds use in many different applications. It has high current gains and low saturation voltages, making it suitable for a variety of digital and analog applications where high current gains and low saturation voltages are desired. This transistor is designed for use in switching, current-gain control, and low-noise applications and is suitable for a wide range of currents and with a relatively low leakage current.

The specific data is subject to PDF, and the above content is for reference

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