2PB1219AS,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-6486-2-ND |
Manufacturer Part#: |
2PB1219AS,115 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 50V 0.5A SOT323 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 140MHz 200m... |
DataSheet: | 2PB1219AS,115 Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.02967 |
6000 +: | $ 0.02580 |
15000 +: | $ 0.02193 |
30000 +: | $ 0.02064 |
75000 +: | $ 0.01935 |
150000 +: | $ 0.01720 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 150mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | 2PB1219 |
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2PB1219AS,115 Transistors - Bipolar (BJT) - Single
2PB1219AS,115 transistors are typically used in power management applications, providing low on–resistance, low drop–out voltage, and low quiescent current. They are designed with a compact, single package, making them an ideal choice for applications where space is limited. The 2PB1219AS,115 is a medium power bipolar junction transistor (BJT) designed for switching, power amplification, signal amplification, and other applications where a moderate amount of power is required. The device is capable of low–level & high–level switching and has very low on–resistance.
Working Principle: The 2PB1219AS,115 is a single–transistor device, based on the bipolar junction transistor (BJT) architecture. It consists of an emitter, base, and collector connected as a three–port device. The base–emitter junction acts as a rectifying junction that allows current to flow in either direction, depending on the applied voltage. When a forward–biased voltage is applied to the base, the junction becomes forward–biased and the device behaves as a switch, allowing current to flow from the collector to the emitter. When a reverse–biased voltage is applied, the junction becomes reverse–biased and the device behaves as a diode, blocking current from flowing from the base to the emitter.
Application Field: Power management applications requiring low on–resistance, low drop–out voltage, and low quiescent current are ideal applications for the 2PB1219AS,115. It is commonly used in automotive, industrial, and consumer applications, as well as in audio, medical, and lighting solutions. Additionally, the 2PB1219AS,115 can be used in a wide range of other applications, including motor control, power conditioning, and switching.
The 2PB1219AS,115 can be used for low–level & high–level switching, power amplification, signal amplification, and other applications where a moderate amount of power is required. These include power management, motor control, and audio equipment, as well as data transmission and communication devices. Additionally, the 2PB1219AS,115 can be used in a variety of other applications, such as light dimmers, LCD backlighting, voltage regulators, digital logic, and RF circuits. This device is highly versatile and is popular in many industries and end applications.
The 2PB1219AS,115 features a built–in breakdown voltage protection and an adjustable current limit, making it suitable for a variety of applications requiring control over both voltage and current flow. This device also includes thermal protection and voltage limiting, providing an added level of safety and reliability. The 2PB1219AS,115 is also rated for operation over extreme temperature ranges and is UL certified, making it suitable for high–temperature applications. The device is widely used in a variety of applications, including automotive, industrial, consumer, lighting, and medical solutions.
The 2PB1219AS,115 is a medium power bipolar junction transistor (BJT) designed for switching, power amplification, signal amplification, and other applications where a moderate amount of power is required. It utilizes a single–transistor architecture and is capable of low–level & high–level switching, as well as low on–resistance and low drop–out voltage. This device is widely used in automotive, industrial, and consumer applications, as well as audio, medical, and lighting solutions. Additionally, it can easily be integrated into a variety of other applications, such as motor control, power conditioning, and switching.
The specific data is subject to PDF, and the above content is for reference
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