2PB1219AR,135

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar Junction Transistors, commonly referred to as BJT, are the most common type of transistors. A single BJT consists of three layers of semiconductor material which are termed base, collector and emitter. The 2PB1219AR, 135 is a single BJT transistor designed and manufactured by TT Electronics. This transistor is specifically designed for switching and amplification applications.

The 2PB1219AR, 135 is an NPN-type, bipolar junction transistor. It has an active base region, and two active emitter regions which are separated by a thin oxide layer. The collector connects the two emitter regions to the base, forming a junction. A thin oxide layer isolates the base region from the emitter and collector, which allows charge carriers to flow between the emitter and collector.

The 2PB1219AR, 135 transistor has a wide range of applications including switching and amplification applications, such as audio and power amplifiers, driver circuits, oscillators, voltage regulators, and other linear applications. It can also be used in high power switching applications, due to its high-speed switching time and low off-state current leakage.

When placed in a circuit, the base of the transistor is supplied with a small current or voltage. This creates a small current in the emitter-base junction, and the emitter-collector junction becomes forward biased. This allows current to flow between the emitter and the collector, creating a large current gain, or amplification, in the circuit. The amplification of a transistor depends on the current flow in the base-emitter junction, and the current gain is determined by the current ratio between the collector and the emitter.

The 2PB1219AR, 135 transistor is designed for high-speed switching and linear applications. It offers excellent performance and reliability, due to its high switching speeds and low leakage current. It is also designed with a low base current for power savings. This transistor is compatible with a wide range of circuit designs, and can be used in a variety of applications.

In summary, the 2PB1219AR, 135 is a single BJT transistor designed for switching and amplification. It has an active base region and two active emitter regions which are separated by a thin oxide layer. It has a wide range of applications in audio and power amplifiers, driver circuits, voltage regulators, oscillators, and other linear applications. It is designed for high-speed switching and linear applications and offers excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference