Allicdata Part #: | 2PB1219AS,135-ND |
Manufacturer Part#: |
2PB1219AS,135 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 50V 0.5A SOT323 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 140MHz 200m... |
DataSheet: | 2PB1219AS,135 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02193 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 150mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | 2PB1219 |
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2PB1219AS is a type of single bipolar junction transistor (BJT), which is defined by its structure and function within an electronic circuit. It acts as a combination of two diodes within the same package, connected to a third terminal, the base. As electricity is applied at its base, current passes through the two junctions, allowing the device to amplify signals, or act as a switch.
The 2PB1219AS is a NPN-type BJT, with a maximum collector current of 0.5A, a continuous collector current of 0.2A, and a maximum power dissipation of 1W. Its collector-base voltage is 60V, with a collector-emitter voltage of 45V and an emitter-base voltage of 5V. Its gain cutoff frequency is 10MHz, while its elevation temperature range is between -65°C and 150°C.
The primary application field of the 2PB1219AS is control systems. Its amplifier characteristics, specifically its gain bandwidth product, are applicable to these systems and enable the transistor to respond quickly to change in its immediate electrical environment. As a switching device, it is commonly used in relays, where its ability to draw electricity through its base allows it to both open and close circuits rapidly in response to trigger signals.
Its general working principle consists of three layers of atomic structure. The outer layer, called the emitter, has excess electrons due to their expulsion from the other two layers; here, electrical current enters the CMOS. The second layer, the base, is a moderately thin region that controls the flow of the electrical current from the emitter. The inner layer, the collector, collects electrons from the base as an output from the device. The base and collector are also connected by an external current source.
Within an electric circuit, positive charges are applied to the base of the 2PB1219AS, which causes them to pass through the base-emitter junction and travel to the emitter. The electrons then pass through the emitter-collector junction and are collected at the collector. Between the two junctions, the transistor increases the current, thus amplifiying the provided signal or allowing it to act as a switch. Once the current is boosted and sent to the output, the current decreases, allowing the transistor to effectively reset.
The 2PB1219AS is an efficient, reliable and versatile single bipolar junction transistor, with a wide range of application in control systems. Its combination of power output and ability to rapidly respond to environmental changes make it a powerful control device for a variety of products. Its three parts of structure, and its working principle of providing increased current outputs, make it a valuable and irreplaceable tool within the modern electronics industry.
The specific data is subject to PDF, and the above content is for reference
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