2SA2154CT-GR,L3F Allicdata Electronics
Allicdata Part #:

2SA2154CT-GRL3FTR-ND

Manufacturer Part#:

2SA2154CT-GR,L3F

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 50V 0.1A
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 100mW...
DataSheet: 2SA2154CT-GR,L3F datasheet2SA2154CT-GR,L3F Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02699
30000 +: $ 0.02540
50000 +: $ 0.02381
100000 +: $ 0.02117
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The 2SA2154CT-GR,L3F is a single bipolar junction transistor (BJT) and is part of the transistor family. It is mainly used for power amplification and switching. This particular transistor device is manufactured by STMicroelectronics and features low voltage operation, high current gain, and low power dissipation.The symbol used to represent a bipolar junction transistor is a triangle with the emitter, base and collector connected to each other. The emitter is the side that faces the ground, while the collector is the side that carries the current. The base of the transistor is the region between the emitter and the collector.The 2SA2154CT-GR,L3F has a maximum collector-emitter voltage rating of 250 volts and a maximum collector-base voltage rating of 300 volts. It also has an operating power dissipation of 0.3 watts. The maximum collector current of the device is 1.0 amperes.In order for the 2SA2154CT-GR,L3F to operate properly, it must be properly biased (or biased correctly). This can be done by connecting the base-emitter junction with a resistor or a diode to the supply voltage (which can be either positive or negative).When a bit of current flows from the power supply to the collector, then the base-emitter voltage (VBE) will become positive which in turn will cause the collector voltage (VCB) to become positive as well. This positive voltage will induce a current from the collector to the emitter, thus providing amplification. This is the principle on which the device works.The 2SA2154CT-GR,L3F can be used in various applications such as power amplifiers, switching applications and other circuit designs. It is most effective in power amplifiers due to its low voltage operating characteristics, high current gain and low power dissipation. It is also a suitable choice for switching circuits due to its high collector-emitter voltage rating, fast switching time, and low power consumption.Apart from its power amplifying characteristics and switching applications, the 2SA2154CT-GR,L3F can also be used to design circuits such as line drivers, radio modulators and other signal processing circuits. It is also an ideal choice for low noise circuits as its low voltage operating characteristics help to reduce noise.The 2SA2154CT-GR,L3F is commonly used in audio amplifiers, video amplifiers, switching power supplies, and power amplifiers. It is also a popular choice for circuit designs that require high speed switching, low power consumption, and low voltage operation. This device is easy to use and sells relatively cheap when compared to other transistors in the same family.Overall, the 2SA2154CT-GR,L3F is a great choice for power amplifying and switching applications. It offers low voltage operation, high current gain and low power dissipation. It is also suitable for low noise circuits and signal processing circuits. It is easy to use, durable and reliable.

The specific data is subject to PDF, and the above content is for reference

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