2SA2126-H Allicdata Electronics
Allicdata Part #:

2SA2126-H-ND

Manufacturer Part#:

2SA2126-H

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 3A TP
More Detail: Bipolar (BJT) Transistor PNP 50V 3A 390MHz 800mW T...
DataSheet: 2SA2126-H datasheet2SA2126-H Datasheet/PDF
Quantity: 1480
1 +: $ 0.33390
10 +: $ 0.28539
100 +: $ 0.21300
500 +: $ 0.16737
1000 +: $ 0.12933
Stock 1480Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 800mW
Frequency - Transition: 390MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SA2126
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SA2126-H is a single bipolar (BJT) transistor component that has a wide variety of uses. It is a NPN device with a maximum collector current of 0.2A, a maximum collector-emitter voltage of 80V and a maximum power dissipation of 0.3W. In electronic circuits, transistors like the 2SA2126-H are commonly used to amplify, switch and regulate signals. The 2SA2126-H can be used in a range of applications, from audio systems and power supplies to control circuitry and high-frequency RF amplifiers. It is also a popular component in analog circuits, as it can accurately control current and perform linear amplification. The 2SA2126-H has three terminals: the base, the collector and the emitter. It works by electrons traveling from the emitter toward the collector, under the influence of the electrical current in the base. As current flows through the base, the base-emitter voltage causes a voltage to be developed at the collector, which controls the flow of current from the collector to the emitter. By controlling the base current, the current flowing through the collector-emitter junction can be controlled as well. Since the 2SA2126-H is a NPN transistor, the emitter and collector terminals should have higher voltage potentials than the base. A more positive voltage potential will result in greater current through the collector-emitter junction. Conversely, a more negative voltage potential will reduce the collector-emitter current. In both cases, the base current should remain constant to maintain linear operation. The 2SA2126-H is a versatile component that can be used for a variety of circuit applications. It is an excellent choice for simple amplification circuits, as well as for switching and regulating signals. Additionally, it can be used for both short term and long-term power supplies, and it is also very effective for high frequency RF amplification. For a 2SA2126-H to work properly, it is important to create the correct bias conditions for the transistor. This means that the base, collector and emitter must have proper voltage potentials and, when the transistor is in saturation, it is important to monitor the collector current to ensure that it does not exceed the maximum collector current of 0.2A. To sum up, the 2SA2126-H is a versatile single bipolar (BJT) transistor component that is capable of amplifying, switching and regulating signals, while also functioning as a power supply. When utilizing a 2SA2126-H component, it is important to ensure that bias conditions and collector current are kept within the maximum operating parameters of the component. With proper usage, a 2SA2126-H component can be used for a wide variety of circuit applications.

The specific data is subject to PDF, and the above content is for reference

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