Allicdata Part #: | 2SA2174J0LTR-ND |
Manufacturer Part#: |
2SA2174J0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 50V 0.1A SSMINI-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 125mW... |
DataSheet: | 2SA2174J0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 2mA, 10V |
Power - Max: | 125mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
Base Part Number: | 2SA2174 |
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.The 2SA2174J0L is an NPN transistor, and belongs to the single bipolar junction transistor (BJT) category. It is designed for a range of high-power, high-density switching applications, and it is capable of keeping up with fast-rising signals due to its high gain. It also offers excellent current gain, making it ideal for applications with both low- and high-power demands.
The transistor features an intricate base-emitter-collector connection, which is essentially a three-terminal device with three layers of semiconductor material. The emitter layer is made of a highly-doped semiconductor material, and the collector and base layers are made of a lighter-doped semiconductor material. The base layer is also situated between the emitter and collector layers, and is responsible for controlling the flow of current between them.
The main purpose of the 2SA2174J0L is to switch a large current between the emitter and collector layers. When the base layer is supplied with a small current, the current in the collector-emitter layer will increase, causing a significant voltage drop across the collector-emitter junction. This voltage drop allows the transistor to be used as an effective amplifier.
The 2SA2174J0L is used in power switching applications, where high-powered devices are required to handle fast-rising signals. It is often used in power control and distribution circuits, such as power supply circuits and DC/DC converters. The transistor is also suitable for high-frequency switching, as it can switch pulses of greater than 500 kHz with minimal losses. The transistor has the ability to handle temperatures up to +150°C, making it suitable for high-temperature applications.
This NPN transistor is also notable for its low distortion, allowing it to produce clean sound signatures when used in audio applications. It is also well-suited to be used in Class-D amplifiers, a type of amplifier that employs switching to achieve power efficiency. Due to its robust package and excellent electrical characteristics, the 2SA2174J0L is widely used in consumer electronics, automotive electronics, and industrial applications.
In summary, the 2SA2174J0L is a reliable and powerful NPN transistor that belongs to the single bipolar junction category. It is designed for high-density switching applications, and it is suitable for audio applications due to its low distortion. It is also capable of handling fast-rising signals due to its high gain, and it can handle high temperatures up to +150°C. The transistor can be used for power control and distribution circuits, such as power supply circuits and DC/DC converters, and is widely used in consumer electronics, automotive electronics and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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