| Allicdata Part #: | 2SA2072TLQ-ND |
| Manufacturer Part#: |
2SA2072TLQ |
| Price: | $ 0.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PNP 60V 3A CPT |
| More Detail: | Bipolar (BJT) Transistor PNP 60V 3A 180MHz 1W Surf... |
| DataSheet: | 2SA2072TLQ Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.26000 |
| 10 +: | $ 0.25220 |
| 100 +: | $ 0.24700 |
| 1000 +: | $ 0.24180 |
| 10000 +: | $ 0.23400 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 180MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | CPT3 |
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The 2SA2072TLQ is a transistor produced by Toshiba, and is an NPN silicon epitaxial type transistor. It is part of the family of single-Bi-polar (BJT) transistors. It is a medium power transistor, and is suited for use in general purpose applications.
In terms of its features, the 2SA2072TLQ has an excellent collector current gain, high voltage breakdown (Vceo of -80V) and a large current handling capability of 2A. It also has a spacious pitch of 3.2mm. Additionally, this transistor has good linearity and a low stand-by current.
Due to its high functionality, the 2SA2072TLQ is ideal for numerous applications. These include power supply units, TV receivers, radio receivers, audio amplifiers and other general purpose applications.. It is a simple, yet reliable transistor and is widely used across a variety of industries.
One of the reasons the 2SA2072TLQ is such a popular transistor is due to its simplicity. This is because it works off what is known as a ‘BJT’ working principle. This stands for Bi-polar (BJT) junction transistor, and is a core element of electronics. This type of transistor is composed of three layers of doped semiconductor material, which sometimes go by the names of ‘emitter’, ‘base’, and ‘collector’. The base of the transistor provides the connection between the collector and the emitter and it is here that the current is controlled by a relatively small current.
The main functions of the transistor are based on the physics behind it. This starts with the emitter, which injects electrons into the base. Those electrons are then amplified by the collector which is managed by a current applied to the base (hence the name ‘Bi-polar’ junction transistor, due to its active use of electrons and holes). This results in current amplification from the input, which is highly beneficial in many modern-day applications, giving it a wide range of uses.
To summarise, the 2SA2072TLQ is part of Toshiba\'s single-Bi-polar (BJT) transistors and typically used in general purpose applications. It is highly popular due to its high functionality, and low stand-by current. This is made possible through its working principles and the physics behind it; the managing of electrons and holes at the base junction to ultimately amplify current from the input.
The specific data is subject to PDF, and the above content is for reference
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2SA2072TLQ Datasheet/PDF