| Allicdata Part #: | 2SA2016-TD-EOSTR-ND |
| Manufacturer Part#: |
2SA2016-TD-E |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 7A SOT89-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 7A 330MHz 3.5W Su... |
| DataSheet: | 2SA2016-TD-E Datasheet/PDF |
| Quantity: | 2000 |
| 1 +: | $ 0.11200 |
| 10 +: | $ 0.10864 |
| 100 +: | $ 0.10640 |
| 1000 +: | $ 0.10416 |
| 10000 +: | $ 0.10080 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 7A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 40mA, 2A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
| Power - Max: | 3.5W |
| Frequency - Transition: | 330MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PCP |
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2SA2016-TD-E transistors are categorized as Single Bipolar Junction Transistors (BJT). They are small-signal transistors used primarily in consumer appliances and low-power audio production. 2SA2016-TD-E transistors are complimentary to 2SC3778-T1-E transistors.
2SA2016-TD-E transistors are used in a variety of consumer appliances, from microwaves and refrigerators to vacuum cleaners and radios. They are used as amplifiers and switches in low-power audio applications, such as amplifiers for car stereos and home theater systems. Additionally, they are used in medical applications such as medical imaging and test equipment.
The 2SA2016-TD-E transistor is a PNP-type transistor with a maximum collector-emitter voltage of 80 V. It has an emission current of 150 mA and a maximum collector current of 800 mA. The 2SA2016-TD-E transistor has a maximum collector-emitter saturation voltage of 0.3 V and a capacitance of 4.0 pF. The transistor has a power dissipation of 2.2 W.
The working principle of 2SA2016-TD-E transistors is based on the bipolar junction transistor (BJT) technology. BJT transistors have three terminals (collector, base, and emitter) and they are used as amplifiers and switches. When a small current is applied to the base of the transistor, the collector-emitter current increases. This increased current is used to switch on and off other electrical components, or to amplify small signals.
2SA2016-TD-E transistors are constructed with silicon die, which is a semiconductor material. A thin layer of silicon nitride and some other materials are then added to it. These layers form the three points (emitter, base, and collector) of the transistor. A small amount of current, when applied to the base, causes a larger current to flow through the collector and emitter. This increased current is used for the desired purposes.
2SA2016-TD-E transistors can be used in various fields such as consumer electronics, audio production, and medical equipment. They are an efficient way to switch on and off electrical components or to amplify small signals. The 2SA2016-TD-E transistor is a reliable and robust transistor, which makes it an ideal choice for low-power audio applications.
The specific data is subject to PDF, and the above content is for reference
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2SA2016-TD-E Datasheet/PDF