Allicdata Part #: | 2SJ01630RLTR-ND |
Manufacturer Part#: |
2SJ01630RL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | JFET P-CH 20MA 150MW MINI-3 |
More Detail: | JFET P-Channel 20mA 150mW Surface Mount Mini3-G1 |
DataSheet: | 2SJ01630RL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 600µA @ 10V |
Current Drain (Id) - Max: | 20mA |
Voltage - Cutoff (VGS off) @ Id: | 1.5V @ 10µA |
Input Capacitance (Ciss) (Max) @ Vds: | 12pF @ 10V |
Resistance - RDS(On): | 300 Ohms |
Power - Max: | 150mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Base Part Number: | 2SJ0163 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
N-channel JFETs are commonly used in many electronic applications. The 2SJ01630RL is a type of N-channel field effect transistor that is designed to operate at high voltages, allowing it to be used in devices such as high power amplifiers, high-speed switching circuits, and logic circuits. It is an ideal choice for device designs that require high power levels, wide operating temperature ranges, or low input capacitance.
The 2SJ01630RL is a trench-gate, damage-free junction field effect transistor (JFET) device. It is configured as an N-channel device with gate and drain on the same level. This configuration promotes lower capacitance and reduced gate leakage currents. It is composed of high-quality materials to provide the strength and reliability needed for high power applications.
The 2SJ01630RL is a versatile component and can be used for a variety of purposes. It can be used for blocking, Gain, attenuation, signal switching and signal conditioning. In addition, it is also suitable for low noise and low input voltage applications. It is an ideal choice for many applications requiring high gain, high power and high performance.
The working principle of a 2SJ01630RL is based on the concept of field effect. The gate of this transistor is connected to a voltage source and can be used to control the flow of current through the device. The current then flows through the junction between the source and the drain. As the voltage applied to the gate increases, the resistance between the source and the drain decreases and more current is allowed to flow.
The 2SJ01630RL is a high-performance device that is suitable for a variety of high-end applications. It offers high gain, low noise, and high input voltage capability. It is widely used in amplifier circuits and logic circuits. In addition, this device has excellent thermal performance, making it suitable for use in high power applications. It is also used in medical and industrial applications.
The 2SJ01630RL offers many advantages and is a popular choice for device designs. It is designed to operate at high voltages and has a wide operating temperature range. In addition, it has low input capacitance, which reduces gate leakage current. It is also composed of high-quality materials to provide strength and reliability.
In conclusion, the 2SJ01630RL is an ideal choice for device designs that require high power levels, wide operating temperature ranges, or low input capacitance. It is widely used for blocking, gain, attenuation, signal switching and signal conditioning. It is also suitable for low noise and low input voltage applications. This device is a versatile component and can offer many advantages for device designs.
The specific data is subject to PDF, and the above content is for reference
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