2SJ053600L Allicdata Electronics
Allicdata Part #:

2SJ053600LTR-ND

Manufacturer Part#:

2SJ053600L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET P-CH 30V .1A S-MINI-3P
More Detail: P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: 2SJ053600L datasheet2SJ053600L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rds On (Max) @ Id, Vgs: 75 Ohm @ 10mA, 5V
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1µA
Series: --
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SJ053600L belongs to a popular type of transistors called Field Effect Transistors (FETs). It is a single MOSFET which is a type of FET with a metal oxide semiconductor between the gate and the source. This device is ideal for use in high frequency applications as it has an extremely low On resistance, meaning that it can reduce power loss due to heat generation. In addition, it has a low gate capacitance which allows for improved switching speed, making it a popular choice for quick response and high frequency circuits.

The 2SJ053600L is designed for a wide range of applications, from low to medium power circuits such as switching and driving applications, to high current DC/DC converters. It is particularly suitable for switching power supplies, since it can reduce energy losses associated with switching at high frequencies. Moreover, it is commonly used as a power switch in consumer electronics, automotive, and industrial applications.

The working principle of the 2SJ053600L transistor is based on the FET principle of operation. In this type of device, the gate voltage controls the current flow between the source and the drain, thus allowing for a wide range of potential gains or losses. When the voltage applied to the gate meets the minimum threshold required to turn the transistor on, a conduction channel is created between the source and the drain and current is allowed to flow. This conduction channel is known as the depletion zone, and its width and temperature greatly influence the transistor’s operating performance.

When the source and the drain voltage exceeds the transistor’s threshold voltage, current flow is greatly enhanced. In this mode, the transistor is said to be in saturation and it draws drain-source current from the power supply, thus becoming a switch. In contrast, when the voltage applied to the gate is below the minimum threshold, the conduction channel is not formed and current cannot flow through the transistor, thus creating an open circuit.

The 2SJ053600L transistors are designed for use in a variety of high frequency switching applications and are particularly suitable for switch mode power supplies and high current DC/DC converters. They are typically used in commercial electronic products, instruments and process control, automotive, and industrial applications. They have a high power handling capability, low On resistance and improved switching speed, making them a popular choice for quick response and high-frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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