2SJ03640QL Allicdata Electronics
Allicdata Part #:

2SJ03640QLTR-ND

Manufacturer Part#:

2SJ03640QL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: JFET P-CH 20MA 150MW SMINI3P
More Detail: JFET P-Channel 20mA 150mW Surface Mount SMini3-G1
DataSheet: 2SJ03640QL datasheet2SJ03640QL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
Current Drain (Id) - Max: 20mA
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 10µA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Resistance - RDS(On): 300 Ohms
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Base Part Number: 2SJ0364
Description

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Transistors - JFETs

2SJ03640QL Application Field and Working Principle

The 2SJ03640QL is a JFET transistor with a high-voltage high-speed switching feature. It is a surface-mounted sandwich type device and has an ultra-compact package size. They are mainly used for high-side switching applications in consumer electronics and computers such as DC/DC converter, switching power supply, and generator control.JFET transistors are normally-on devices, meaning that they are always in the on state when no voltages are applied. This makes them ideal for noise-sensitive applications. They have a very low junction capacitance, which is an essential feature for the proper operation of switching applications.The 2SJ03640QL is a P-channel JFET device, meaning that its source is at a higher potential than the gate. The gate voltage controls the current to the drain by changing its electric charge. The higher the gate voltage, the higher the current.The working principle of the 2SJ03640QL is basically the same as that of other JFETs. A voltage is applied to the gate, and the electric field generated by the resulting electric current modulates the width of the depletion region, thereby controlling the channel current.The operation of a P-channel JFET is slightly different from that of a N-channel device. In the case of a P-channel device, the gate is of a higher potential than the source, while in the case of a N-channel device, the gate is of a lower potential than the source. This difference results in the polarities of the currents being reversed.The 2SJ03640QL can be used in various applications depending on the needs of the user. Its wide operating temperature range and high power rating make it suitable for high-side switching applications. It is also well-suited for use in switching power supplies and DC/DC converters, as well as in motor control and generator control applications.The 2SJ03640QL is a versatile JFET transistor made of a high-quality silicon substrate and processed with a special passivation process. It is designed to provide superior performance in various switching applications and is available in an ultra-compact package size. It has a wide operating temperature range and high power rating, making it an ideal device for high-side switching applications.The 2SJ03640QL JFET transistor is a device designed for high-speed switching in consumer electronics, computers and other applications. Its wide operating temperature range and high power rating make it suitable for various switching applications. It is an ideal device for those seeking a compact and robust solution for their switching needs.

The specific data is subject to PDF, and the above content is for reference

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