2SJ0674G0L Allicdata Electronics
Allicdata Part #:

2SJ0674G0LTR-ND

Manufacturer Part#:

2SJ0674G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET P-CH 30V .1A SSSMINI-3
More Detail: P-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount ...
DataSheet: 2SJ0674G0L datasheet2SJ0674G0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Power Dissipation (Max): 100mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Vgs (Max): ±12V
Series: --
Rds On (Max) @ Id, Vgs: 18 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SJ0674G0L is a single enhancement mode silicon gate field-effect transistor (FET). It is typically used for switching applications, and works by controlling the voltage and current applied to the source and drain terminals. The 2SJ0674G0L is a type of insulated gate FET (IGFET) which is a combination of a field-effect transistor, an insulated gate, and a capacitive element. In this type of transistors, the gate terminal is completely insulated from the rest of the circuit using a dielectric material, it can vary from highly ionized materials such as silicon dioxide to more conductive materials such as Tantalum Pentoxide. This insulation allows for more accurate and controlled current and voltage control, as well as better integration into complex circuits.

The 2SJ0674G0L is specifically an enhancement mode FET, which means that when the voltage applied to the gate is increased, the current will increase linearly. This type of transistor is particularly useful in applications such as circuits with low noise and high-speed operations. This type of transistor is typically used when switching pulses need to be generated, or when a high current or frequency needs to be switched.

The 2SJ0674G0L also has a few distinct advantages. One of these advantages is its high input impedance which allows it to be used in high-powered applications. Additionally, it has high power dissipation and low gate leakage current. The 2SJ0674G0L is also highly reliable, and can be used in temperatures ranging from -60°C to 150°C.

The 2SJ0674G0L is most commonly used in switching power supplies, AC drives, DC motors, and other switch mode devices. It is also used in automotive applications, such as in fuel injectors and spark plug ignitors. It can be used to control the current and voltage applied to high-powered devices, such as in high-powered speakers. Additionally, it can also be used in audio amplifiers, where it is used to control the current applied to the amplifier.

The working principle behind a FET is relatively simple. When the voltage applied to the gate of the 2SJ0674G0L exceeds the threshold voltage, it changes the resistance between the source and drain terminals. As the voltage increases, the resistance decreases, thereby allowing more current to flow between the source and the drain. This process can be repeated, allowing for the precise control of current or voltage in circuits with high current loads.

In summary, the 2SJ0674G0L is a single enhancement mode silicon gate field-effect transistor (FET). It is typically used for switching applications and controlling high current or voltage. It is highly reliable, has a high input impedance, and low power dissipation. The 2SJ0674G0L is most commonly used in switching power supplies, AC drives, DC motors, and other switch mode devices, as well as automotive applications.

The specific data is subject to PDF, and the above content is for reference

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