2SK545-11D-TB-E Discrete Semiconductor Products

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A JFET, or Junction Field-Effect Transistor, is a type of transistor that utilizes a reverse-biased gate-channel junction to control current flow. The 2SK545-11D-TB-E is a silicon N-channel JFET from the Toshiba 2SK545 series, which features low noise performance, low input capacitance, and low power dissipation.

Application Field

The 2SK545-11D-TB-E JFET is suitable for a wide range of analog and digital circuits, and due to its low noise characteristics, it is well suited for use in sensitive audio applications, such as preamplifiers, amplifiers, and tone controls. The low input capacitance of the 2SK545-11D-TB-E makes it ideal for use in RF circuits and digital switching applications. The 2SK545-11D-TB-E can be used alone, or in tandem with other semiconductor components in multiple configurations to provide a suitable solution for complex applications.

Working Principle

The 2SK545-11D-TB-E is an N-channel JFET, meaning it is constructed with a source and drain connected to a silicon channel layer that is reverse biased with a gate terminal. The negative charge on the gate terminal maintains a depletion region under the silicon channel, terminating conduction in the channel. The size of the depletion region determines the conductivity of the JFET, so when there is no current flowing through the JFET, the depletion region is zero and the JFET is at maximum conductivity. When a positive voltage is applied to the gate terminal, the depletion region increases, narrowing the width of the conducting channel and reducing the flow of current.

The drain current is reduced further with higher gate-source voltages, making the 2SK545-11D-TB-E suitable for voltage-controlled current applications, such as amplifier bias circuits or audio and video level control circuits. As an N-channel JFET, the 2SK545-11D-TB-E will provide a low-noise, low voltage drop, with a very high input impedance and a very low output impedance.

Due to the gain control capabilities of the 2SK545-11D-TB-E, it is also widely used in applications such as memory circuits, time delay circuits, power switching and frequency oscillators. The low-noise characteristics of the 2SK545-11D-TB-E also make it suitable for use in communication circuits, making it a popular choice for radio receivers, transmitters, modulators, and radio frequency amplifiers.

The 2SK545-11D-TB-E is a versatile device and can be adapted for a variety of other applications where a voltage-controlled current source is suitable. The device is available in a range of sizes and packages, allowing for integration into a range of circuit designs and system requirements.

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