2SK536-TB-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SK536-TB-E is a type of insulated gate bipolar transistor (IGBT). The letters TB in its name stand for ‘thin-buffer’. IGBTs are semiconductor switching devices that combine the advantages of the conventional bipolar transistor (BJT) and MOSFETs. Because of this combination, IGBTs offer several advantages over traditional bipolar transistors, making them an ideal choice for many applications.

IGBTs have a two-terminal P-N-P-N junction and are operated by voltage control in the same way as an MOSFET. When the voltage reaches the IGBT’s threshold voltage, the device turns on and current flows in the collector-emitter. When the voltage drops below this threshold voltage, current no longer flows. As a consequence, the electricity only passes when required, which is more energy efficient than a BJT, in which the current flows at all times.

The 2SK536-TB-E is a N-channel, IGBT with a maximum drain-source voltage of 600V, suitable for a wide range of applications. It is typically used to develop DC-AC inverters, DC-DC converters, motor drives, UPS, welding machines, and industrial applications. Its operating temperature range is between - 40C to 125C and its storage temperature range is between - 40C to 150C.

When the gate voltage is increased, the threshold voltage of the IGBT will also be increased, and the current flow through the device will also be increased. This means that the device is ideal for applications requiring pulse width modulation (PWM) like motor drives and converters.

The 2SK536-TB-E has a low Gate threshold voltage and a low Gate-to-drain capacitance which makes it suitable for high-frequency operations. It is high in reliability as it has an internal protection circuit that prevents the device from being destroyed due to excessive current. The device also has low input capacitance for improved noise immunity, and high speed switching for improved response time.

In addition, the 2SK536-TB-E also has an integrated ESR (external series resistance) circuit to reduce switching losses. The ESR circuit protects the device from high voltage transients and allows for a higher frequency operation. The ESR also helps to reduce switching losses, resulting in improved efficiency.

Overall, the 2SK536-TB-E is a suitable choice for a wide range of applications due to its combination of improved energy efficiency, low gate threshold voltage, low input capacitance, and high speed switching. The integrated ESR circuit also helps to reduce switching losses, making it a reliable and efficient IGBT.

The specific data is subject to PDF, and the above content is for reference