Allicdata Part #: | 2SK596S-A-ND |
Manufacturer Part#: |
2SK596S-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 0.1W |
More Detail: | JFET N-Channel 1mA 100mW Through Hole 3-SPA |
DataSheet: | 2SK596S-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 100µA @ 5V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 4.1pF @ 5V |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-72 |
Supplier Device Package: | 3-SPA |
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Introduction
2SK596S-A is a junction gate field-effect transistor (JFET) used for high-current switching applications. It is small and compact in size, yet offers superior performance compared to ordinary N-channel JFETs. It has a low on-resistance, high switching speed and a wide safe operating area.
Application Field
2SK596S-A is a versatile transistor that can be used for a variety of applications. Like any other transistor, it can be used for switching, amplifying and buffering signals. It is mainly used in motor control circuits, motor drives, high current relays, inductive load switching, and load protection applications.
2SK596S-A differs from other JFET models in that it has a higher current rating, which makes it suitable for higher power applications. It is also able to handle large inrush currents, making it a good choice for applications such as high current inverter drives and panel meter circuits.
Moreover, 2SK596S-A is small and compact in size, making it ideal for use in tight spaces. Its low on-resistance also makes it efficient for applications that require low power dissipation.
Working Principle
2SK596S-A is a junction gate field-effect transistor (JFET), which is a three-terminal device typically used for switching and amplifying signals. It is made up of an N-type silicon channel, a source terminal and a drain terminal.
The operation of 2SK596S-A is based on the principles of field-effect transistors (FET). A gate voltage applied to the gate terminal will create an electric field across the channel, resulting in an electric current flowing from the source to the drain. The current is controlled by the gate voltage, which can be used to switch the transistor on or off.
The 2SK596S-A also has a low “on resistance” or “drain-to-source resistance” (RDSon). This means that it has an exceptionally low power dissipation when turned on, making it an extremely efficient switch. The RDSon value is the main parameter used to determine the performance of the transistor.
Conclusion
2SK596S-A is a versatile JFET commonly used for high-current switching applications. It has a higher current rating than other N-channel types and is able to handle large inrush currents. It also has a low on-resistance and small form factor, making it ideal for use in tight spaces and efficient power applications. The working principle of 2SK596S-A is based on the principles of field-effect transistors, using an electric field created by the gate voltage to switch and amplify signals.
The specific data is subject to PDF, and the above content is for reference
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