Allicdata Part #: | 2SK596S-B-ND |
Manufacturer Part#: |
2SK596S-B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 100MW SPA |
More Detail: | JFET N-Channel 1mA 100mW Through Hole 3-SPA |
DataSheet: | 2SK596S-B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 150µA @ 5V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 4.1pF @ 5V |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-72 |
Supplier Device Package: | 3-SPA |
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Junction Field Effect Transistors (JFETs) are a type of field effect transistor that use a reversebiased P-N junction to achieve the controlled current flow of traditional BJTs and BJT amplifiers. JFETs are commonly used in audio applications, such as amplifiers, or in analog switch applications.
The 2SK596S-B is a P-Channel Junction Field Effect Transistor (JFET). It is available in a TO-3 package, and has an R DS(ON) of 0.85 mΩ, a V DS of 60V and an I DS of 18A. It is designed for use in amplifier design and power management applications.
The basic construction of a JFET consists of three regions: the source, the drain, and the gate. The drain and source regions form a reverse biased P-N junction, and the gate is formed by a metal conductor insulated from the P-N junction by an oxide layer. As the voltage applied to the gate increases, the depletion region of the P-N junction becomes larger, reducing the cross-sectional area between the source and drain. This reduces the current flow through the junction, which is known as the "pinch-off effect".
The JFET can function in either depletion mode (D-mode) or enhancement mode (E-mode). In depletion mode, the current between the source and drain is decreased as the gate voltage is increased. In enhancement mode, the current between the source and drain is increased with an increase in the gate voltage. The 2SK596S-B is a depletion mode JFET, meaning that the gate voltage is used to reduce the current between the source and drain. This reduces the current flow, making it ideal for use in power management applications.
The 2SK596S-B has a wide range of applications, including use in amplifiers, microwave devices, and audio equipment, as well as power management devices. It can be used for high frequency amplification, high speed switching, and static current limiting devices, as well as in high gain low noise amplifiers. Its low R DS(ON) makes it ideal for use in high temperature environments.
In conclusion, the 2SK596S-B Junction Field Effect Transistor (JFET) is a versatile device that can be used in a wide range of applications. Its depletion mode operation allows it to be used in power management applications, while its low R DS(ON) makes it ideal for use in high temperature environments. Its versatility, combined with its low power consumption and reliability, make it an attractive choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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