3.0SMCJ17ATR Allicdata Electronics
Allicdata Part #:

3.0SMCJ17ATRSMC-ND

Manufacturer Part#:

3.0SMCJ17ATR

Price: $ 0.34
Product Category:

Circuit Protection

Manufacturer: SMC Diode Solutions
Short Description: TVS DIODE 17V 27.6V SMC
More Detail: N/A
DataSheet: 3.0SMCJ17ATR datasheet3.0SMCJ17ATR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
42000 +: $ 0.30839
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Voltage - Clamping (Max) @ Ipp: 27.6V
Supplier Device Package: SMC (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 106.6A
Series: --
Voltage - Breakdown (Min): 18.9V
Voltage - Reverse Standoff (Typ): 17V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient Voltage Suppression (TVS) Diodes, such as 3.0SMCJ17ATR, are widely used for protection against voltage spikes or overvoltage events in a variety of electronics applications. They are effectively miniature crowbar devices, designed to protect circuits by providing a low resistance path to ground when a voltage over a certain level is sensed. This allows the device to absorb a large amount of current and then dissipate in form of heat, protecting the rest of the circuit from further damage. High-voltage TVS Diodes are also often used to protect against ESD, or Electro-Static Discharge.

The 3.0SMCJ17ATR is part of the SMCJ series of TVS Diodes, offering low operating voltage and low leakage current, with a peak pulse power dissipation of 1000W. The device is configured in a surface mount package, offering effective protection to a wide range of microelectronic circuits. It features a breakdown voltage of 17V and a low capacitance of 0.8pF, allowing for the protection of devices operating at frequencies of up to 6GHz. It also offers an excellent balance between capacitance and power handling capability, making it a suitable choice for protecting modern high-speed circuits.

The internal structure of 3.0SMCJ17ATR is similar to other diode-based devices, featuring an example A with a PN junction. When forward bias is applied, electrons and holes will cross the PN junction and form a current flow through the diode. When reverse bias is applied, the electrons and holes will not flow across the same junction, and the diode will block any current flow. This is the principle that is used for the protection of circuits, by having the diode block any voltages that exceed a certain level.

In addition to providing protection to circuits, 3.0SMCJ17ATR devices can also be used in other applications such as providing channel switching protection for automotive applications. In these instances, the device acts as an electronic switch that is triggered when a certain voltage threshold is exceeded. This allows for an easy and efficient method of switching signals without the need for complex circuitry.

TVS Diodes such as 3.0SMCJ17ATR are widely used in a variety of industries due to their excellent protection capabilities and typically small physical size. They are capable of providing protection against transient voltages of up to 20kV, while also providing protection against Electro-Static Discharge. Their low capacitance ensures that high-speed signal applications can be protected without the need for bulky capacitors.

The specific data is subject to PDF, and the above content is for reference

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