| Allicdata Part #: | 62-0136PBF-ND |
| Manufacturer Part#: |
62-0136PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 19A 8-SOIC |
| More Detail: | N-Channel 30V 19A (Ta) 2.5W Surface Mount |
| DataSheet: |  62-0136PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
| Package / Case: | -- |
| Supplier Device Package: | -- |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TA) |
| Power Dissipation (Max): | 2.5W |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3710pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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A 62-0136PBF is a type of depletion-mode field effect transistor (FET) well suited for a wide range of applications. It is a monolithic device that can be integrated into a system for providing active control of electric current. In this article, we’ll discuss the 62-0136PBF’s application field and working principle.
Applications
Due to its depletion-mode capability, this type of FET is best suited for applications such as circuit protection, gain control, and switching operations. Specifically, the 62-0136PBF is often used in noise-sensitive dc circuits, providing low leakage current, low noise, and excellent temperature stability. Moreover, its low on-resistance and threshold voltage features make it very reliable in low-voltage audio and video circuits. The 62-0136PBF is also used as a level-shifting or pull-down device in programmable logic systems.
Working Principle
The 62-0136PBF is an N-channel FET that uses electrical charges present in a semiconductor material junction to gate current from source to drain. Its gate is connected to the source, effectively creating a three-terminal device with gate, source, and drain. The FET’s depletion-mode characteristics mean that when the gate voltage is at 0 volts, current flows from source to drain. Increasing the gate voltage will lower this current. Typically, the gate potential is set to its minimum when the device is in an off position and its maximum when it is in an on position.
The 62-0136PBF works by varying the width of a semiconductor channel connecting the source and drain. This is done by applying an electric field generated by the voltage applied to the gate. When a positive voltage is applied to the gate, it pushes electrons away from the channel, effectively narrowing the width of the channel and blocking the flow of current. Conversely, when a reverse bias is applied to the gate, it attracts electrons to the channel, increasing the width of the channel and allowing current to flow. In this way, the control of current is achieved.
Interfacing with Other Devices
As with other FET devices, the 62-0136PBF can be connected to other complimentary components such as resistors and diodes for additional noise suppression, switching, and protection applications. Furthermore, its interfacing with other FETs can be used to design high-gain, low-noise circuits. In addition, the 62-0136PBF can be combined with MOSFETs to create high power circuits that draw very little current.
Conclusion
The 62-0136PBF FET is an excellent choice for many applications where noise suppression, protection, and switching are required. Its depletion-mode and low-voltage features make it very reliable in different operating conditions. While it is designed to be connected to other components, its low on-resistance and threshold voltage capabilities make it an ideal choice for use in a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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