| Allicdata Part #: | IXTH14N80-ND |
| Manufacturer Part#: |
IXTH14N80 |
| Price: | $ 9.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 14A TO-247 |
| More Detail: | N-Channel 800V 14A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH14N80 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 8.14926 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | MegaMOS™ |
| Rds On (Max) @ Id, Vgs: | 700 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH14N80 is a n-channel enhancement mode MOSFET transistor. It is a part of IXYS Power MOSFET family. This device is suitable for power switching, converters excellent in high frequency operation, motor driving and any other high frequency switching application. This MOSFET offers very low RDS(on) compared to traditional MOSFETs. The operating temperature of this device ranges from -55°C to 175°C.
The IXTH14N80 is an N-Channel MOSFET, meant to be used in applications where the FET is used in an enhancement mode. This means that the FET is operated in an enhancement mode, where the MOSFET is turned off when the gate voltage is lower than that of the source and the drain. When the gate voltage rises above the sourcer and drain, the FET becomes active and conducts between source and drain. This is the general operating principle of a MOSFET.
The IXTH14N80 can be used in a wide range of applications. It has very low on-state resistance due to its enhanced construction. This makes the device the ideal choice for applications requiring low voltage operation. Due to its high switching speed and low gate charge it can be used in power-switching converters, such as AC/DC converters, that require excellent high-frequency operation. The device is also well-suited for motor driving applications, as it can quickly turn on and off to deliver the required power to the motor.
In addition, the IXTH14N80 is a capable device for other switching applications such as DC-DC conversion, load balancing, and load control. It can also handle large load current better than other power MOSFETs, and its low gate-drain capacitance allows for a higher-frequency operation for switching applications without introducing additional noise.
Some other notable features and specifications of the IXTH14N80 are low on-resistance, high transistor gain, very fast switching speed, high input impedance, fast packing and good thermal characteristics. All of these features make the IXTH14N80 an ideal choice for power switching applications.
In summary, the IXTH14N80 is a high performance N-channel enhancement mode MOSFET device. It offers very low on-state resistance and high transistor gain. It is suitable for a wide range of applications such as power switching, motor driving, DC-DC converters, and load balancing. In addition, the device has excellent thermal characteristics and fast packing. All of these features make the IXTH14N80 an ideal device for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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