IXFT9N80Q Allicdata Electronics
Allicdata Part #:

IXFT9N80Q-ND

Manufacturer Part#:

IXFT9N80Q

Price: $ 8.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 9A TO-268
More Detail: N-Channel 800V 9A (Tc) 180W (Tc) Surface Mount TO-...
DataSheet: IXFT9N80Q datasheetIXFT9N80Q Datasheet/PDF
Quantity: 1000
1 +: $ 8.05140
Stock 1000Can Ship Immediately
$ 8.95
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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IXFT9N80Q is a power field-effect transistor (FET) manufactured by IXYS Corporation. It is a mixed signal and single-mode MOSFET transistor with a maximum collector-emitter voltage of 900V and an RDS(on) (maximum drain-source on-resistance) specification of 0.04 Ohms. This power FET is designed for high-current, medium-power applications such as motor control and power conversion. In addition, it can be used in AC/DC and DC/DC converters for high-voltage battery management systems and solar cell applications.

The IXFT9N80Q is created using IXYS’s high-voltage BCDMOS technology. It provides a high voltage, low RDS(on) while maintaining a low gate charge. This FET also offers improved junction breakdown voltage and reduced size. In addition, the IXFT9N80Q is available in a space-saving DualINLine package format and has a maximum operating junction temperature of 175°C.

The IXFT9N80Q is an n-channel FET and works by forming an electrical field in the area between the drain and the source. This field is activated and controlled by the gate terminal. The amount of current flowing through the FET depends primarily on the voltage between the gate and the source. When the voltage between the gate and the source is increased, the electrical field increases, resulting in a higher drain current level. This makes the FET highly efficient at controlling large currents.

The IXFT9N80Q is a versatile power FET suitable for many applications. It is especially well-suited for applications that require high current and high voltage. It is commonly used in motor control applications such as motor starters, contactors, and pressure regulators. The IXFT9N80Q can also be used for battery management, DC to AC and AC to DC converters, and solar cell applications. Its low gate charge and high voltage capabilities make it an ideal choice for these types of applications.

The IXFT9N80Q is also well-suited for many applications where load current needs to be switched in a highly efficient and reliable manner. For example, it can be used to switch lights and appliances, or to open and close contactors. It is also useful in controlling current flow in induction motors, DC motors, and stepper motors. This FET is also popular in DC/DC converters and AC/DC inverters.

In summary, the IXFT9N80Q is a versatile single-mode MOSFET transistor with excellent power efficiency. It is suitable for a wide range of applications including motor control, power conversion, battery management, and DC/AC and AC/DC conversion. It is capable of operating at high voltages, with a low RDS(on), and it is available in a space-saving DIL package.

The specific data is subject to PDF, and the above content is for reference

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