Allicdata Part #: | IRFL31N20D-ND |
Manufacturer Part#: |
IRFL31N20D |
Price: | $ 1.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 31A D2PAK |
More Detail: | N-Channel 200V 31A (Ta) Surface Mount D2PAK |
DataSheet: | IRFL31N20D Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 1.51457 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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The IRFL31N20D is a type of field effect transistor (FET) called a Metal–oxide–semiconductor field-effect transistor (MOSFET). It is used in a variety of different applications, and many people find it useful because it is capable of switching signals rapidly. This article will explain the different applications and working principle of the IRFL31N20D.The IRFL31N20D is a single polarity MOSFET. It is one of the highest voltage-managed FET parts available, with a breakdown voltage of 200 volts. It is a N-channel MOSFET with a drain current rating of 30 amps and a maximum drain-source voltage of 200 volts. This makes it suitable for a wide variety of applications.The IRFL31N20D is typically used for power switching and motor control applications; it can be used to control the speed, torque, direction, and position of motors. It can also be used for amplifier and voltage regulator circuits. The device can be used for switched-mode power supplies and linear power amplifiers, and is also suitable for battery-operated equipment. The IRFL31N20D is a normally-off transistor; its drain-source current is off in the absence of a gate-source voltage. This means its low leakage current characteristics can be used advantageously in standby power applications. It has a low gate charge which enables it to switch quickly and with low loss. The device can handle high currents and provides high switching frequencies, making it suitable for high speed switching applications.The working principle of the IRFL31N20D is based on the use of a voltage applied to the gate to control the conductivity of the channel. When a negative voltage is applied to the gate, the N-channel MOSFET is turned off; when a positive voltage is applied to the gate, the N-channel MOSFET is turned on. This makes the IRFL31N20D an ideal choice for power switches and motor control applications, as it can be used to switch quickly and with low loss.Overall, the IRFL31N20D is a highly versatile FET for a variety of applications. Its high drain current rating and breakdown voltage make it suitable for battery-powered applications and high-power conversion jobs. It also offers a low gate charge for switching quickly, as well as low leakage current for standby power applications. These features, combined with its working principle based on gate voltage, make the IRFL31N20D an excellent choice for those looking for a FET with great performance in both power switching and motor control applications.The specific data is subject to PDF, and the above content is for reference
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