Allicdata Part #: | IXTT440N055T2-ND |
Manufacturer Part#: |
IXTT440N055T2 |
Price: | $ 7.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 440A TO-268 |
More Detail: | N-Channel 55V 440A (Tc) 1000W (Tc) Surface Mount T... |
DataSheet: | IXTT440N055T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.98059 |
Series: | TrenchT2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 440A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 405nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 25000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1000W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXTT440N055T2 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) used in applications such as flyback converters and other AC/DC power sources. It has a maximum drain-source on-state resistance (RDSon) of 55mΩ and is capable of handling currents up to 64A. This makes it ideal for applications that require efficient power conversion with minimal current flow.
Overview of IXTT440N055T2
The IXTT440N055T2 is a N-channel power MOSFET. It has a low input capacitance of 31pF and an on-resistance (RDSon) of 55mΩ. It has a maximum drain current of 64A and a maximum continuous drain voltage of 55V. The package for this device is a D-PAK.
Application Field & Working Principle
IXTT440N055T2 is mainly used in the applications of Flyback Converters and AC/DC Power Sources. It is suitable for the designs that need superior conduction and switching performance. On the other hand, it can provide efficient efficiency while minimizing losses by controlling current flow properly.
The working principle of the IXTT440N055T2 MOSFET is based on the MOSFETs unique structure. It has a gate oxide layer placed between the semiconductor channel and the gate electrode. When the gate voltage is applied, it inverts the conductivity of the channel depending on the voltage. As a result, current flows through the channel and the drain-source voltage is determined based on the voltage applied to the gate.
In flyback converters and other AC/DC power sources, IXTT440N055T2 MOSFETs are used for controlling the current flow of the circuits. This MOSFET offers superior performance in terms of conduction and switching performance. It has a low RDSon of 55mΩ that can reduce power losses in the circuit. Moreover, this MOSFET has a maximum continuous drain current of 64A which can handle the high current flow needed in the circuits.
Conclusion
In conclusion, IXTT440N055T2 is an ideal MOSFET solution for applications that require efficient power conversion with minimal current flow. It has a low RDSon of 55mΩ which minimizes power losses in the circuit. Furthermore, it has a maximum continuous drain current of 64A which can handle the high current flow needed in the circuits. It is suitable for flyback converters and other AC/DC power sources.
The specific data is subject to PDF, and the above content is for reference
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