IXTT72N20 Allicdata Electronics
Allicdata Part #:

IXTT72N20-ND

Manufacturer Part#:

IXTT72N20

Price: $ 9.01
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 72A TO-268
More Detail: N-Channel 200V 72A (Tc) 400W (Tc) Surface Mount TO...
DataSheet: IXTT72N20 datasheetIXTT72N20 Datasheet/PDF
Quantity: 1000
30 +: $ 8.10894
Stock 1000Can Ship Immediately
$ 9.01
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
FET Feature: --
Power Dissipation (Max): 400W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Description

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The IXTT72N20 is a transistor designed to serve as a power transistor in various applications. It is an enhanced p-channel, metal oxide semiconductor field effect transistor (MOSFET), manufactured with advanced process technology, incorporating a low resistance embedded source tab. This exceptional transistor can handle high-current pulsing applications and offers fast switching performance.

This MOSFET benefits from a very low on-resistance of 2.2 mΩ @ VGS = 10 V, making it suitable for power management applications, such as DC/DC converters and motor driver stages, often subject to variable loads and inverter circuits. The IXTT72N20 also provides a low VGS threshold from 1.8 V, and an optimized logic level gate drive. The device also features a wide operating temperature range of -55 °C to +175 °C.

The working principle of the IXTT72N20 is based on the same concept as general MOSFETs. MOSFET transistors utilize the electrical field of a voltage to control the current flow. In the case of the IXTT72N20, this is accomplished using a MOS capacitor. The switch is controlled by a single gate terminal, which when the voltage reaches a certain level will create a channel between the source and the drain, allowing the current to flow.

Other important features of the IXTT72N20 are its low gate-source capacitance and avalanche insulation. This MOSFET has a low gate-source capacitance, which enables fast switching speed, making it an ideal choice for switch-mode power supplies, battery charger circuits and high-frequency induction heating. In addition, the IXTT72N20 contains integrated avalanche protection, ensuring that the device does not suffer from avalanche breakdown, which is common in high-voltage applications.

Overall, the IXTT72N20 is a highly robust and reliable MOSFET with excellent features, making it well suited for a wide range of industrial and commercial applications. Its low on-resistance, low voltage gate threshold, and low-capacitance gate-source die make it ideal for today\'s power management applications.

The specific data is subject to PDF, and the above content is for reference

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