Allicdata Part #: | IXTT72N20-ND |
Manufacturer Part#: |
IXTT72N20 |
Price: | $ 9.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 72A TO-268 |
More Detail: | N-Channel 200V 72A (Tc) 400W (Tc) Surface Mount TO... |
DataSheet: | IXTT72N20 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 8.10894 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 400W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT72N20 is a transistor designed to serve as a power transistor in various applications. It is an enhanced p-channel, metal oxide semiconductor field effect transistor (MOSFET), manufactured with advanced process technology, incorporating a low resistance embedded source tab. This exceptional transistor can handle high-current pulsing applications and offers fast switching performance.
This MOSFET benefits from a very low on-resistance of 2.2 mΩ @ VGS = 10 V, making it suitable for power management applications, such as DC/DC converters and motor driver stages, often subject to variable loads and inverter circuits. The IXTT72N20 also provides a low VGS threshold from 1.8 V, and an optimized logic level gate drive. The device also features a wide operating temperature range of -55 °C to +175 °C.
The working principle of the IXTT72N20 is based on the same concept as general MOSFETs. MOSFET transistors utilize the electrical field of a voltage to control the current flow. In the case of the IXTT72N20, this is accomplished using a MOS capacitor. The switch is controlled by a single gate terminal, which when the voltage reaches a certain level will create a channel between the source and the drain, allowing the current to flow.
Other important features of the IXTT72N20 are its low gate-source capacitance and avalanche insulation. This MOSFET has a low gate-source capacitance, which enables fast switching speed, making it an ideal choice for switch-mode power supplies, battery charger circuits and high-frequency induction heating. In addition, the IXTT72N20 contains integrated avalanche protection, ensuring that the device does not suffer from avalanche breakdown, which is common in high-voltage applications.
Overall, the IXTT72N20 is a highly robust and reliable MOSFET with excellent features, making it well suited for a wide range of industrial and commercial applications. Its low on-resistance, low voltage gate threshold, and low-capacitance gate-source die make it ideal for today\'s power management applications.
The specific data is subject to PDF, and the above content is for reference
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