Allicdata Part #: | 62-0203PBF-ND |
Manufacturer Part#: |
62-0203PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 12V 16A 8-SO |
More Detail: | P-Channel 12V 16A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | 62-0203PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8676pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 16A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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P-channel Field-Effect Transistor (P-FET) is a type of semiconductor device with an insulated gate electrode between two electrodes. In this type of device, current only flows in the direction through the drain and source when a voltage is applied to the gate electrode. It is a unipolar device, meaning that it does not allow current to flow through the gate. P-FETs are widely used in electronic circuits in both analog and digital applications.The 62-0203PBF is a P-FET device that can be used in various applications. It is a Toshiba product with a source-drain voltage of 60V, a current rating of 2A and an on resistance of 3Ω. It is used in a variety of applications, such as audio amplifiers, voltage regulators, motor drivers and pulse amplifiers. The principle of operation of the 62-0203PBF P-FET is based on the movement of charge carriers. When a voltage is applied to the gate electrode, an electric field is created which causes a current to flow between the drain and source, resulting in a voltage drop between them. This voltage drop is proportional to the applied gate voltage and the magnitude of the drain current.The 62-0203PBF P-FET operates using two different modes of operation, enhancement mode and depletion mode. In enhancement mode, the drain-source current increases when the gate voltage is higher than the threshold voltage. In depletion mode, the drain-source current increases when the gate voltage is lower than the threshold voltage.The 62-0203PBF P-FET is manufactured using a silicon-gate processing technology. This process allows for a high level of integration and performance, which is necessary for operation in a variety of applications. It has a high frequency response, high switching speed, low gate capacitance and low on-resistance.The 62-0203PBF P-FET is widely used in many different types of circuits and applications. It is commonly used as a switch in switching power supplies and digital logic circuits. It is also used in motor control in industrial applications such as robotics. Additionally, it is used as an amplifier in audio and video systems.In conclusion, the 62-0203PBF P-FET is a versatile device that can be used in a wide range of applications. It has a high level of integration, high switching speed and low on-resistance. The device operates using two different modes of operation, enhancement mode and depletion mode, and is manufactured using a silicon-gate process for a high level of performance. It is commonly used as a switch in switching power supplies, in digital logic circuits, in motor controllers and in audio and video amplifiers.
The specific data is subject to PDF, and the above content is for reference
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