64-0055PBF

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64-0055PBF is a single N-Channel Enhancement-Mode Gallium Nitride (GaN) Field-Effect Transistor (FET) produced by Tycon Power Systems. With its combination of high speed, low on resistance and ultra-low levels of on-state resistance, it is ideally suited for applications such as Automotive, Power over Ethernet (PoE), Communications, Battery Back-Up Systems, and Uninterruptible Power Supplies (UPS) .

In a nutshell, transistors are semiconductor switches that allow current to flow through a circuit. N-channel transistors are more commonly found in applications, as they require a smaller gate voltage to switch on and off, compared to a P-channel transistor. This is why 64-0055PBF is well-suited to a wide range of applications requiring fast switching and reasonable gate control over current through the circuit.

64-0055PBF has an extremely low on-state resistance compared to other available transistors. This makes it ideal for applications such as battery back-up systems, as it can still switch on and off even when battery power is low or non-existent. In addition, 64-0055PBF also has a very low gate threshold voltage, which is important for PoE applications, where the power delivery is relatively short from the mains supply to device. For example, a laptop connected to an external device via PoE can still receive power even when the voltage drops relatively quickly from the device.

When voltage is applied to the gate of the 64-0055PBF, a low impedance connection is formed between the drain and source, allowing current to pass through the device. This is known as ‘enhancement mode’. When the gate is shut off, the impedance of the connection rises, and the current is blocked. This is known as ‘depletion mode’. This is the same principle used by transistors in other applications.

The 64-0055PBF has a number of features that make it particularly suitable for uninterruptible power supplies (UPS) under heavy load conditions. With a very low threshold voltage, current can be controlled accurately, allowing the system to stay up even during periods of large power demand. The low on-state resistance also reduces heat dissipation in the device, meaning that the device does not need to be replaced as often, as is the case in other lower-end transistors.

In addition, the GaN material used in the 64-0055PBF allows for much faster switching times and higher operating temperature ratings, compared to what’s possible with other semiconductor materials. This makes this device perfectly suited for switching high-power applications, such as those found in automotive and communications systems.

In a nutshell, the 64-0055PBF is an N-Channel Enhancement-Mode transistor that is ideally suited for applications that require high speed, low on-state resistance, and ultra-low levels of on-state resistance. With its combination of features, such as low threshold voltage, low on-state resistance, and fast switching times, it is perfect for Automotive, PoE, Communications, battery back-up systems, and UPS systems.

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