64-2092PBF Allicdata Electronics
Allicdata Part #:

64-2092PBF-ND

Manufacturer Part#:

64-2092PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2P...
DataSheet: 64-2092PBF datasheet64-2092PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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A field-effect transistor or FET is a type of transistor that works by controlling the electrical field in one or more channel regions between a source and drain. 64-2092PBF is a type of single FET which is used for various applications in power management and sensing. This article will discuss the application field and working principle of 64-2092PBF.

Applications of 64-2092PBF

64-2092PBF is an enhancement-type single N-channel MOSFET which is mainly used in power conversion and management. It is suitable for 95 V DC applications and provides reliable and low-noise power switching. This FET is often used in applications such as medical equipment, floor cleaning robots and custom power supplies, due to its low on-resistance values and low power consumption. It is also used in hobby robotics and automotive electronics, as well as in wireless, telecom and datacom applications.

Working Principle of 64-2092PBF

The 64-2092PBF works on the principle of a voltage-controlled FET. It consists of an N-channel, which is formed between a source and a drain, and an additional gate region over the source-drain channel. When a positive voltage is applied to the gate, it attracts electrons from the source into the channel and the current starts to flow from the source to the drain. Thus, the current flow is controlled by the gate voltage. The resistance between the source and the drain, known as channel resistance, is called Rds(on) and is defined as the resistance of the path between source and drain when the gate voltage is equal to the Vgs(th).

Conclusion

In conclusion, 64-2092PBF is an enhancement-type single N-channel MOSFET which is suitable for 95 V DC applications. Its main application lies in power conversion and management and it is used in several fields such as medical equipment, robotics, automotive electronics, telecom and datacom. It works on the principle of voltage-controlled FET, where a specific voltage is applied to the gate to induce current in the channel and thus control the current flow.

The specific data is subject to PDF, and the above content is for reference

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