Allicdata Part #: | 64-2092PBF-ND |
Manufacturer Part#: |
64-2092PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2P... |
DataSheet: | 64-2092PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 66A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A field-effect transistor or FET is a type of transistor that works by controlling the electrical field in one or more channel regions between a source and drain. 64-2092PBF is a type of single FET which is used for various applications in power management and sensing. This article will discuss the application field and working principle of 64-2092PBF.
Applications of 64-2092PBF
64-2092PBF is an enhancement-type single N-channel MOSFET which is mainly used in power conversion and management. It is suitable for 95 V DC applications and provides reliable and low-noise power switching. This FET is often used in applications such as medical equipment, floor cleaning robots and custom power supplies, due to its low on-resistance values and low power consumption. It is also used in hobby robotics and automotive electronics, as well as in wireless, telecom and datacom applications.
Working Principle of 64-2092PBF
The 64-2092PBF works on the principle of a voltage-controlled FET. It consists of an N-channel, which is formed between a source and a drain, and an additional gate region over the source-drain channel. When a positive voltage is applied to the gate, it attracts electrons from the source into the channel and the current starts to flow from the source to the drain. Thus, the current flow is controlled by the gate voltage. The resistance between the source and the drain, known as channel resistance, is called Rds(on) and is defined as the resistance of the path between source and drain when the gate voltage is equal to the Vgs(th).
Conclusion
In conclusion, 64-2092PBF is an enhancement-type single N-channel MOSFET which is suitable for 95 V DC applications. Its main application lies in power conversion and management and it is used in several fields such as medical equipment, robotics, automotive electronics, telecom and datacom. It works on the principle of voltage-controlled FET, where a specific voltage is applied to the gate to induce current in the channel and thus control the current flow.
The specific data is subject to PDF, and the above content is for reference
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