| Allicdata Part #: | 64-2105PBF-ND |
| Manufacturer Part#: |
64-2105PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 75A TO-262 |
| More Detail: | N-Channel 40V 75A (Tc) 200W (Tc) Through Hole TO-2... |
| DataSheet: |  64-2105PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4340pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The 64-2105PBF is a P chanel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) made for a specific application and with a designated set of working principles. This type of transistor is an essential element of most advanced technologies, including those related to safety, audio, automotive, and power management.
A MOSFET is a three-terminal, voltage-dependent device, which means that it acts like a variable resistor across the source and drain terminals. The width of the "channel" through which current can flow depends on the amount of voltage at the gate, which is the third terminal. This ability to control the current, which passes through the channel, makes the MOSFET a powerful tool.
The 64-2105PBF has a breakdown voltage - the voltage beyond which no current can pass - of 20 volts (VDSS) and can handle up to 10 amps (ID). Its gate threshold voltage (VGS) is 10 volts, which means it can be used with a wide range of voltage inputs. The maximum power dissipation of this MOSFET is 250mW (PD).
The 64-2105PBF is meant for specific application fields such as power management, automation, and mechatronics. Its main function is to switch on and off electrical loads such as motors and heaters, providing power when and where it is needed. This makes the 64-2105PBF a great choice for systems that need to be connected and disconnected rapidly. With its superior performance and high power capabilities, it is perfect for industrial control systems and applications that need reliable operation.
The working principle of MOSFETs is based on two phenomena: the channel-length modulation effect and the channel-thickness modulation effect. The channel-length modulation effect is related to the gate voltage; the more voltage applied to the gate, the more electrons can pass through the channel between the source and the drain. The channel-length modulation effect is what makes the MOSFET a voltage-dependent device.
The channel-thickness modulation effect, on the other hand, is the result of the electrons located in the source and the drain. As current increases, the electrons migrate through the channel, making it thicker and allowing more current to flow. This phenomenon is also essential for controlling the current of the MOSFET.
The 64-2105PBF is an excellent choice for controlling and switching high voltage and current loads. Its main advantages are its voltage-dependent operation, its wide range of applications, and its ability to provide reliable and precise power. Therefore, it is widely used in various industries and applications.
The specific data is subject to PDF, and the above content is for reference
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