
Allicdata Part #: | 64-4123PBF-ND |
Manufacturer Part#: |
64-4123PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V DPAK |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The 64-4123PBF is a 3-terminal, monolithic, insulated-gate, field-effect transistor (IGFET) designed for use in power switching and voltage regulation applications. It is designed to offer lower threshold voltage and higher on-resistance than most other IGFETs in its class. The 64-4123PBF is available in an 8-pin package, which includes a high voltage drain supply pin, a low voltage gate supply pin and a source pin. The device is also able to provide very low on-resistance when operating at higher drain-source voltages.
The 64-4123PBF device has two types of application fields. The first is in power switching, where the device is used to control the large amounts of current normally found in mobile phones and other portable personal electronics. The second is in voltage regulation, where the device can be used to control and adjust the voltage levels of power supplies and other power converters.
The operating principle of the 64-4123PBF is similar to that of other IGFETs. When the gate voltage is increased, the on-resistance of the device decreases. This is due to the fact that the electric field created by the higher gate voltage increases the mobility of the conduction electrons in the channel of the FET, thereby reducing the device\'s on-resistance. Conversely, when the gate voltage is reduced, the on-resistance increases again as the electric field weakens and the conduction electrons are unable to move freely in the channel.
The 64-4123PBF is an insulated-gate field-effect transistor (IGFET) designed for use in power switching and voltage regulation applications. It is available in an 8-pin package, which includes a high voltage drain supply pin, a low voltage gate supply pin and a source pin. It is able to provide very low on-resistance when operating at higher drain-source voltages. The device’s operating principle is based on controlling the electric field created by a higher gate voltage to increase the mobility of the conduction electrons in the channel of FET, thereby reducing its on-resistance.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
