| Allicdata Part #: | 64-6006PBF-ND |
| Manufacturer Part#: |
64-6006PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 300V 46A TO-247AC |
| More Detail: | N-Channel 300V 46A (Tc) 430W (Tc) Through Hole TO-... |
| DataSheet: |  64-6006PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 430W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7370pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 247nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 59 mOhm @ 33A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
| Drain to Source Voltage (Vdss): | 300V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The 64-6006PBF is a N-Channel power metal oxide semiconductor field-effect transistor (MOSFET) from Motorola Semiconductor, specifically designed for high current applications. It has excellent power handling capabilities, which make it suitable for high power switching devices, voltage regulators, audio amplifiers and portable equipment.
The 64-6006PBF is a single, low power MOSFET capable of delivering up to 20 amps of continuous drain current. It has a breakdown voltage of 19 volts and can handle up to 30 volts of drain to source voltage. The MOSFET is well suited for applications that require highly efficient power delivery and operation.
Working principle: The operation of a MOSFET is based on the phenomenon of majority carrier transport. In a MOSFET, a voltage applied to the gate is used to control the current flow in the channel. The channel forms under the influence of the voltage applied to the gate and is known as the channel width. The channel width is determined by the current flowing through it, and hence the amount of power delivered to the load.
The maximum current flow through the channel is limited to the value of the operating voltage and the breakdown voltage of the MOSFET. At conduction, the gate voltage limits the voltage applied to the gate. The gate voltage must be less than the breakdown voltage for safe operation. The power dissipated by the device is determined by the resistance of the channel, the maximum current flowing through it, and the applied voltage.
Applications: The 64-6006PBF has a wide range of applications due to its excellent power handling capabilities. It can be used in power amplifiers and other audio applications, power amplifiers, voltage regulators, voltage stabilization circuits and switching applications. The device is also suitable for high power switching devices, battery management systems and portable equipment.
The 64-6006PBF is a N-Channel power MOSFET, capable of delivering up to 20 amps of drain current. The MOSFET is well suited for high power applications and can handle both low and high voltage applications. The device has excellent power handling capabilities and can be used in a wide range of applications such as power amplifiers, voltage regulators, voltage stabilization circuits and switching applications.
The specific data is subject to PDF, and the above content is for reference
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