64-9150PBF Allicdata Electronics
Allicdata Part #:

64-9150PBF-ND

Manufacturer Part#:

64-9150PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V DIRECTFETL8
More Detail:
DataSheet: 64-9150PBF datasheet64-9150PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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64-9150PBF is a N-Channel enhancement mode MOS Field-Effect Transistor (MOSFET) that utilizes a planar stripe architecture and advanced design techniques to achieve low on-state resistance (RDS(on)) and fast switching times. This device is commonly used for switching and amplifier applications.

64-9150PBF is packaged in a TO-220 case and is made from silicon substrate. Its case has three leads, the source which is marked by the letter “S”, the drain which is marked by the letter “D”, and the gate which is marked by the letter “G”. Depending on the type of device, the source and drain may either be connected externally to a circuit or internally connected to each other forming a Self-Floating Source (SFS).

The working principle of this device is the same as any MOSFET, it works in a manner similar to a pair of metal plates. When a voltage is applied to the gate terminal, a current flow is generated through the channel region between the source and the drain. This changes the characteristics of the device, allowing for more or less current to flow through the MOSFET, depending on the "state" of the gate.

64-9150PBF transistor is usually applied in automotive, industrial and consumer electronic applications. The device is commonly used for the switching of motor control, lighting, audio amplification and power management applications. It may also be used as an amplifying component, with its low RDS(on) and fast switching times, for higher frequency applications.

64-9150PBF performs with a continuous drain current of 1.5 amperes (A) and a pulsed drain current of 3.0 A. The drain-source voltage, VDS is rated up to 25 volts. It features a total gate charge of 8.5 nC and a maximum drain-source on-state resistance of 0.24 Ω.

The device offers a consistent performance over a wide temperature range, having an input capacitance of 285 pF at f = 1 MHz, and an output gate charge of 2 nC. This transistor is also supplied with 10 µA gate current Leakage current.

64-9150PBF is a high-performance, robust MOSFET that delivers reliable results for a wide range of industrial and consumer applications. Its low on-state resistance, fast switching times and wide temperature tolerance makes it an ideal choice for higher frequency applications.

The specific data is subject to PDF, and the above content is for reference

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