7006L25J Allicdata Electronics
Allicdata Part #:

7006L25J-ND

Manufacturer Part#:

7006L25J

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (16...
DataSheet: 7006L25J datasheet7006L25J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Base Part Number: IDT7006
Description

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The 7006L25J is a specific type of memory chip. Its application field ranges from applications as small as cellular phones and as large as supercomputers, and as many different uses as there are environments. The 7006L25J is a 64 Megabit Synchronous Dynamic Random Access Memory (SDRAM) chip, meaning that it has the capability to read, write and store data in a synchronous fashion – meaning the data is accessed in a single, steady flow (or cycle).

It is a Dynamic Random Access Memory chip (DRAM) because the information is stored in an integrated circuit using transistors and capacitors. Every capacitor contains a single bit of data which can be a 0 or a 1. Access to the stored information is done via the chip’s address and data buses. When a read or write operation is performed, the device’s address bus is used to locate the requested information and the data bus is used to transfer the requested data.

The integrated circuit works in three stages. First, the capacitors are charged to the appropriate voltage level to indicate the stored data. Second, the chosen capacitors are read and the data is written onto the data bus. Finally, the capacitors are returned to the appropriate voltage level.

There are several advantages to the use of a 7006L25J chip. First, because of its synchronous design, it is capable of performing a large number of operations in a relatively short period of time. Second, its DRAM architecture makes it ideal for both RAM and ROM applications – allowing for a large amount of data to be stored, while consuming minimal space. Third, the chip is designed to provide a high level of reliability, allowing it to be used in many applications where reliability is of the utmost importance.

The 7006L25J also has an impressive list of features which make it extremely versatile. It supports both 5V and 3V logic levels, is an asynchronous SDRAM, and has a data write-back (DWW) feature. Additionally, the chip offers an array of built in error-correction codes (ECC), as well as on board jitter control and power-on reset (POR).

In conclusion, the 7006L25J is an impressive and versatile memory chip. It is capable of performing a large number of operations in a short period of time, while providing a high level of reliability. Additionally, it features an array of advanced features that make it extremely versatile, making it a great choice for a variety of applications. As such, it has become a popular choice for a wide variety of memory applications.

The specific data is subject to PDF, and the above content is for reference

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