7006L25J8

The 7006L25J8 memory is a reliable and high-speed memory device designed specifically for use in industrial automation, consumer electronics and media applications. It is a DRAM-based device and provides a lower-power, higher-density alternative to traditional SRAM memories. The device was designed for high-temperature, low-cost memory solutions.

The 7006L25J8 memory device is a dual in-line memory module (DIMM) that supports dual bank organization with four or eight 64-bit words per bank. The device is sold in both Obsolete Stacked Chip format and in Thin Small Outline Package (TSOP) packages with 3.2-mm, 24-pin package body size. The module also supports error correction and bit swapping functionality, allowing users to store data securely.

The main features of the 7006L25J8 memory device include its high-speed buffered burst operation and its low-power operation. The device operates at speeds up to 133 MHz, allowing data to be written and read out quickly. The device also has a low-power operation mode that reduces power consumption to 0.95 mW. This makes it suitable for use in low-power, low-cost applications where power efficiency is of the utmost importance. Additionally, the device has the ability to self-refresh its data, ensuring data remains preserved even after a power failure.

The 7006L25J8 memory device provides an efficient and reliable way to store data in a variety of industrial, consumer and media applications. Its low-power operation, high speed and error correction/bit swapping capabilities make it a highly reliable and cost-effective memory solution. The device is also highly scalable and can be easily adapted to a variety of low-cost, low-power platforms. The 7006L25J8 memory device offers a reliable and cost-effective alternative to traditional SRAM memories, making it an ideal solution for a wide variety of applications.