70V25L25PFGI8 Allicdata Electronics
Allicdata Part #:

70V25L25PFGI8-ND

Manufacturer Part#:

70V25L25PFGI8

Price: $ 16.42
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K...
DataSheet: 70V25L25PFGI8 datasheet70V25L25PFGI8 Datasheet/PDF
Quantity: 1000
750 +: $ 14.92810
Stock 1000Can Ship Immediately
$ 16.42
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V25
Description

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70V25L25PFGI8 application field and working principle

70V25L25PFGI8 is a type of dynamic random access memory (DRAM) device that provides a high-performance, low-power and cost-effective solution for Internet of Things (IoT), automotive and mobile applications. It is an advanced DRAM device designed and optimized for low-power applications with a high-performance, low-latency and high-endurance feature set. DRAM devices are used in a variety of applications, including embedded and consumer electronics, storage, networking and telecommunications, automotive, and industrial applications.

The 70V25L25PFGI8 employs the industry\'s most advanced and highly efficient double data rate (DDR) technologies. DDR technologies allow for the use of both single and dual data rate channels, enabling higher transfer and processing speeds for specific applications. The device supports DDR4 and DDR3, with support for up to 1866 MHz and 2133 MHz, respectively. The device also supports Error Correction Code (ECC) for enhanced reliability and data integrity, as well as an integrated advanced power management system to minimize power consumption.

The 70V25L25PFGI8 is equipped with a range of features and technologies to manage the data transfers efficiently and with low latency. These include the following:

  • Support for up to 1866 MHz and 2133 MHz, allowing for maximum performance.
  • Error correction codes (ECC) for greater data integrity and reliability.
  • Advanced power management system to optimize power consumption.
  • Double data rate (DDR) technology to maximize data transfer speeds.
  • Low latency to minimize processing time.

The 70V25L25PFGI8 also incorporates features to improve its robustness and endurance. These include:

  • Dynamic Power Management (DPM), which provides higher power efficiency.
  • Error Detection and Correction (EDC), which improves memory reliability.
  • Enhanced write caching technology, which increases the write speed and performance by parallelizing data writes.

In addition to the features mentioned above, the 70V25L25PFGI8 also incorporates technologies such as Advanced Management Engine (AME) and Image Signal Processor (ISP) to provide additional functions. The AME is an embedded core processor that provides advanced diagnostics, monitoring, and control over the device. It can monitor system temperatures, voltage levels, and other parameters to provide optimized performance. The ISP provides imaging and signal processing capabilities, allowing for higher resolution, greater contrast and detail, and lower power consumption.

The 70V25L25PFGI8 is designed to meet the needs of embedded systems, providing a low-power solution with high performance, low latency, and high-endurance features. It is an ideal solution for embedded and consumer electronic applications that require robust and durable memory solutions.

The specific data is subject to PDF, and the above content is for reference

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