70V26S55G Allicdata Electronics
Allicdata Part #:

70V26S55G-ND

Manufacturer Part#:

70V26S55G

Price: $ 44.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 84PGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 256Kb (16...
DataSheet: 70V26S55G datasheet70V26S55G Datasheet/PDF
Quantity: 1000
9 +: $ 40.33330
Stock 1000Can Ship Immediately
$ 44.37
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)
Base Part Number: IDT70V26
Description

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The 70V26S55G is a dynamic random access memory (DRAM) chip produced by Winbond Electronics Corporation. It is a type of non-volatile memory, meaning it retains its contents even when power is turned off. The 70V26S55G is a memory device consisting of one or more cells that can store data when a power source is applied. Each cell consists of a capacitor and a transistor, and each cell stores a bit of data. A row of cells are grouped together to form a row, and a column of rows connected to form a column. By switching transistors on and off for each bit, you can read and store data bits to the 70V26S55G memory device.

The 70V26S55G chip is commonly used in embedded systems, mobile phones, computer motherboards, digital video recorders (DVRs), and other electronic devices. It is designed to provide high-speed performance and memory capacity while still keeping power consumption relatively low. It has a capacity of up to 128 megabits, and it supports burst mode operation, which allows the processor to access multiple bits in one operation, resulting in faster access times. It also supports Error-Correcting Code (ECC) which can detect and correct up to 4 errors per 4 bits.

The 70V26S55G memory device works in a synchronous manner. This means that the device is synchronized to an internal clock frequency. By using a clock, the device can access data at a specific frequency, and the data will be stored and retrieved at a consistent speed. The data is stored in cells that are made up of a capacitor and a transistor. When a voltage is applied to the transistor, it turns on, allowing a current to flow through the capacitor and storing a bit of data. When the voltage is turned off, the transistor turns off and the bit is stored.

The 70V26S55G can also be used in a pipelined fashion. This means that while one set of memory cells is being written, the next set is being read. This allows for faster memory access times because the process of accessing the data is split between two sets of memory cells. For example, if the first set of memory cells is writing data, the second set can be used for reading the data without having to wait for the first set to finish.

The 70V26S55G is an ideal solution for many embedded applications. It offers high speed performance and reliable memory capacity, while still keeping power consumption low. It is a great choice when it comes to selecting a non-volatile memory solution for an embedded system. With its built in error checking and other features, it can provide a reliable memory solution for a wide range of embedded applications.

The specific data is subject to PDF, and the above content is for reference

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