
Allicdata Part #: | 70V25S25PF-ND |
Manufacturer Part#: |
70V25S25PF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (8K x 16) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | IDT70V25 |
Description
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Memory
70V25S25PF Application Field and Working Principle
The 70V25S25PF (or simply 70V25) is a type of memory used for storing data in computer systems. It is a type of non-volatile memory, meaning that once the computer is turned off, the stored data will remain intact. The 70V25 has a wide range of applications due to its high capacity, extremely fast transfer speeds, and its low power consumption.The 70V25 is a 25-bit, non-volatile memory device that is capable of storing up to 2 gigabytes of data. It provides a direct data access (DDA) interface, which allows the memory to be accessed in a random and continuous fashion. This makes it very fast, as the computer doesn’t have to wait for the data to be retrieved in order to access the next bit of data. Since the device does not require power to maintain the data, it is also highly reliable for mission-critical applications.The 70V25 relies on the principle of phase change memory (PCM) in order to store the data. PCM is a type of non-volatile memory that uses phase change materials, such as chalcogenides, to store data in bits. PCM operates by changing the state of the phase change material according to the binary logic. Specifically, one state of the material represents a binary 0, and the other state represents a binary 1.The process of writing to the 70V25 begins with the setting of the chargeable electrodes to create a tunnel current. As the tunnel current passes through the phase change material, it can be programmed to represent either a binary 0 or 1. The stored data is then stored in a “checkpoint” format, which allows the data to be written in blocks of 32 bits. This improves the efficiency and speed with which the data can be written.The 70V25 also provides a high level of error protection and data protection. During the read and write operations, the device first checks for any data errors or corruptions. If any errors are detected, it automatically initiates an error correction process to ensure that the data is re-written correctly. Furthermore, the 70V25 includes an internal rechargeable battery, which provides power to the device during periods of power outages, preventing data loss.The 70V25 is an incredibly versatile memory device due to its high capacity, fast transfer speeds, low power consumption, and wide range of applications. It is used in many different types of systems, including consumer electronics, medical systems, automotive systems, and more. With its high capacity and reliability, the 70V25 is an ideal choice for many applications.The specific data is subject to PDF, and the above content is for reference
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