70V26S25J Allicdata Electronics
Allicdata Part #:

70V26S25J-ND

Manufacturer Part#:

70V26S25J

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 84PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 256Kb (16...
DataSheet: 70V26S25J datasheet70V26S25J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)
Base Part Number: IDT70V26
Description

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Memory is a fundamental component of modern electronic devices, from digital watches and smartphones to cutting-edge desktop computers and tablets. 70V26S25J is one of the memory solutions used in these devices, and this article will cover its application field and working principle.

70V26S25J is a low-voltage, low-power CMOS static Random Access Memory (SRAM) designed for use in mobile, consumer and industrial applications. It is ideal for use in a wide range of small gadgets, such as digital cameras and portable media players, and in larger devices like television sets and gaming consoles. The device is particularly noted for its ultra-low power consumption, making it an ideal memory solution for low-energy applications.

In terms of its size, the 70V26S25J is small enough to fit into tight spaces without compromising performance. It is also designed to be resistant to power fluctuations and extreme temperatures, making it suitable for use in almost any environment. Additionally, the device is highly tolerant to radiation, meaning it can survive in even the most challenging conditions.

As a SRAM device, the 70V26S25J is made up of an array of memory cells, each composed of two transistors and a storage capacitor. When power is applied to the cell, the charge on the capacitor is read and its value is then stored in a cell register. Data is stored in the cells as binary 1s and 0s and can be read or written at the same locations with no need for refreshing.

The 70V26S25J can be programmed to hold either 8-bit or 16-bit data words and can be connected to a microcontroller or other processing unit to provide a non-volatile storage solution. It also features an easy-to-use interface that makes it simple to read and write data from a microcontroller. Additionally, the device supports an extended range of operating conditions and features a fast access time of up to 25ns for reading data.

Overall, the 70V26S25J is a reliable, energy-efficient and versatile low-voltage SRAM device that is ideal for a wide range of mobile, consumer and industrial applications. Its small size, power efficiency and ease of use make it an ideal choice for modern electronics devices. With its wide range of features, the 70V26S25J is an excellent choice as a robust and reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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