70V27L20PFI8 Allicdata Electronics
Allicdata Part #:

70V27L20PFI8-ND

Manufacturer Part#:

70V27L20PFI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (32...
DataSheet: 70V27L20PFI8 datasheet70V27L20PFI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V27
Description

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70V27L20PFI8 is a type of NOR flash memory, which consists of 8 million cells in a total capacity of 2 Megabytes. It offers high performance, low power consumption and a low-cost solution for many embedded systems.

NOR flash memory is a type of non-volatile memory that can store data even when power is removed. The memory cells are arranged in a grid of rows and columns, where each cell contains one bit of data. Data is usually stored in packets of 8-bits, with the most significant bit (MSB) at the top of the byte.

70V27L20PFI8 is a single-level cell (SLC) device which means its cells can be programmed or reprogrammed with a single bit of data. It supports Simple Serial Peripheral Interface (SPI) protocol and is often used as a replacement for NOR Flash Memory.

This type of memory is typically used in embedded systems due to its low power consumption and its capability to store data even when the device is powered off. It is suitable for a wide range of applications such as data recording and storage in digital cameras, medical devices, telematics, industrial and automotive applications, smart phones, and more.

The working principle of 70V27L20PFI8 is based on floating gate technology, which uses gate and drain voltages to create an electric field, which modifies the charge stored in the floating gate. This induces a positive or a negative shift in the device threshold voltage and hence changes the stored bit. This technology enables fast single-bit programming as well as high-speed random access readout. Furthermore, data retention time is better compared to other types of flash memories.

In conclusion, 70V27L20PFI8 is an ideal choice of NOR flash memory, providing high performance and low power consumption while offering a low-cost solution for many embedded systems. Its simple SPI protocol makes it suitable for a wide range of applications such as data recording and storage in digital cameras, medical devices, telematics and automotive industries. Furthermore, its suitability for high speed random access and data retention makes it a great choice for many types of devices.

The specific data is subject to PDF, and the above content is for reference

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