| Allicdata Part #: | 70V9269L12PRFI-ND |
| Manufacturer Part#: |
70V9269L12PRFI |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 256K PARALLEL 128TQFP |
| More Detail: | SRAM - Dual Port, Synchronous Memory IC 256Kb (16K... |
| DataSheet: | 70V9269L12PRFI Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Synchronous |
| Memory Size: | 256Kb (16K x 16) |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 12ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 128-LQFP |
| Supplier Device Package: | 128-TQFP (14x20) |
| Base Part Number: | IDT70V9269 |
Description
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Memory is an integral component to any computing system. It allows machines to store data in an efficient and compact manner. One specific type of memory is Dynamic Random Access Memory (DRAM). DRAM is a type of volatile memory that stores each bit of information in a separate capacitor within an integrated circuit. The capacitors must be charged regularly in order for information to be stored.70V9269L12PRFI is one specific type of DRAM. It is a type of “synchronous” DRAM, meaning that it is able to operate with a more precise clock speed. This type of DRAM is designed for use in high-end servers and workstations, and is often used in applications that require high levels of performance. The 70V9269L12PRFI offers a number of features that make it a desirable choice for use in high-end computing applications. It is capable of operating at speeds up to 800MHz and can be configured to use different operating voltages. It also has an integrated error-correcting code (ECC) for increased data integrity.The 70V9269L12PRFI is also known for its low power consumption, making it particularly well-suited for use in mobile devices and other technology where low power consumption is key.The 70V9269L12PRFI has two main components: the row address buffer and the column address buffer. The row address buffer stores the portion of the DRAM address that points to the row of the DRAM array. The column address buffer stores the portion of the DRAM address that points to the column of the DRAM array.The 70V9269L12PRFI works by using the row address buffer to access the row of the DRAM array and the column address buffer to access the column of the DRAM array. Once the desired memory location is identified, the row address buffer is used to access the data stored in that location. The data is then read out of the DRAM using the column address buffer.The 70V9269L12PRFI DRAM is an excellent choice for applications that require high levels of performance and low power consumption. Its precise clock speeds and integrated error-correction allow for efficient and accurate data storage and retrieval, making it a great choice for high-end applications that require the highest levels of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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70V9269L12PRFI Datasheet/PDF