70V9369L9PF Allicdata Electronics
Allicdata Part #:

70V9369L9PF-ND

Manufacturer Part#:

70V9369L9PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 288K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 288Kb (16K...
DataSheet: 70V9369L9PF datasheet70V9369L9PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 288Kb (16K x 18)
Write Cycle Time - Word, Page: --
Access Time: 9ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V9369
Description

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Memory is an essential part of all computers, as it is a vital part of data storage, retrieval and manipulation. The 70V9369L9PF is a type of memory most commonly used in a range of mobile and embedded systems. It consists of a 1024 byte wide by 32K byte deep high density SDRAM memory array. It is available in both 8-pin SOIC and 16-pin SOJ packages.

This type of memory provides an ideal solution for a range of consumer and industrial applications due to its relatively low cost, large capacity and features such as low power consumption. It is used extensively in mobile devices, consumer electronics, automotive systems, communication systems, industrial automation and digital signage applications.

The 70V9369L9PF is based on an improved synchronous dynamic random access memory (SDRAM) design that includes a burst mode feature. This provides speed increases by allowing the memory to operate in a burst mode, enabling it to access multiple address locations in the same clock cycle. This reduces latency and improves efficiency. The memory also featres fast page access, write enable and output enable. This type of memory requires relatively low power consumption compared with other memory types, allowing it to be used in a range of portable, low power applications.

The 70V9369L9PF has a few characteristics that allow for reliable operation in a variety of applications. Its built-in error correction circuit helps protect the memory array against the effects of power glitches or noise. It also has built-in array level wear leveling that evenly distributes write activity among long-term storage areas, which helps to prevent data loss or device malfunction.

The 70V9369L9PF is an ideal memory solution for a wide range of mobile and embedded systems. Its energy efficient performance and built-in protection circuitry makes it a reliable choice for almost any application. Its large capacity and burst mode operation make it a great choice for applications that require speed and reliability.

The specific data is subject to PDF, and the above content is for reference

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