70V9269S9PRFI8 Allicdata Electronics
Allicdata Part #:

70V9269S9PRFI8-ND

Manufacturer Part#:

70V9269S9PRFI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 128TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 256Kb (16K...
DataSheet: 70V9269S9PRFI8 datasheet70V9269S9PRFI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (16K x 16)
Write Cycle Time - Word, Page: --
Access Time: 9ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)
Description

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Memory

The 70V9269S9PRFI8 is a type of memory device with a range of applications spanning multiple industries and applications. This type of memory is designed to store, retrieve, and update data quickly and efficiently. It is used in many different kinds of applications, such as embedded systems, automotive and industrial applications, medical and healthcare systems, industrial control systems, military applications, robotics and more.

Memory is a powerful and important asset in the world today and the 70V9269S9PRFI8 memory device is one of the most efficient and reliable technologies available in the field. It is capable of high performance and low power consumption, making it ideal for a range of applications.

The 70V9269S9PRFI8 device comes with a range of specialized features that make it a perfect fit for many different applications. It features an integrated non-volatile memory, a power-on reset (POR) and a brown-out reset (BOR) detection circuit, an adaptive pulse shaping circuit and an adjustable output voltage. Additionally, it has extremely low power consumption and an asynchronous clock buffer, making it a great choice for battery-powered applications.

In terms of its working principle, the 70V9269S9PRFI8 is designed to use multiplexed addressing for efficient data storage. This type of addressing arranges the data in a specific order, allowing for the storage and retrieval of information quickly and efficiently. When the data stored within the device is changed, the device can quickly and easily modify the data stored accordingly.

The 70V9269S9PRFI8 also has a self-test capability that enables it to constantly monitor its own performance. This allows it to make sure that any errors that may occur during the data storage and retrieval process are identified and corrected quickly.

The 70V9269S9PRFI8 also has an on-chip eFuse memory, which provides an extra layer of protection for the stored data. The eFuse memory is able to detect any illegal modifications to the data stored within the device and, if detected, will alert the user of the issue and prevent any future modifications from taking place.

Overall, the 70V9269S9PRFI8 is a versatile and powerful memory device with a range of applications. It is capable of efficient data storage and retrieval, low power consumption, and a self-testing capability. Additionally, its on-chip eFuse memory provides a level of data security that is useful for many different types of applications. As such, it is a great choice for anyone looking for a reliable and versatile memory device for their project.

The specific data is subject to PDF, and the above content is for reference

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