71V016SA12BFGI

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Memory is an important component within any computer system, that allows it to retain and store data. The 71V016SA12BFGI is a low power CMOS Static Random Access Memory (SRAM) that falls within this category. It is packed with features that make it an incredibly multifaceted and versatile memory device, that can be used in a range of applications.

71V016SA12BFGI Specifications and Features

This device uses 71V016SA12BFGI technology to provide an 8M bit memory array that has been partitioned into 16K ½ word blocks. Each word block is 64 bits wide and comprises of one bit from each of the 8 memory units. It is two-way set-associative, with an 18 bit virtual address offset (or "offset"). The bus width of the device is 16 bits and it offers a wide range of clock speeds. The device is supported by an advanced power management system that helps conserve energy, as well as a low power standby mode. It also comes with a built-in self-test feature that enables automatic diagnosis of any errors.

71V016SA12BFGI Application Fields

The 71V016SA12BFGI is a highly capable memory device that offers a diverse range of features and benefits across a variety of uses. Due to its power efficiency, the device is well-suited for embedded systems that require reliable, high-density data storage. It is also ideal for applications that require ultra-low latency data retrieval, such as embedded graphics or signal processing in audio and video applications. The fast speed and low latency of the memory device also make it suitable for use in embedded machine learning applications, such as artificial intelligence.

71V016SA12BFGI Working Principle

The 71V016SA12BFGI is a static random access memory device that uses a combination of bit-mapping and row-addressing to store and retrieve data. It supports byte-level read and write operations, to allow high-speed data retrieval and modification of bytes within the memory array. Each byte is mapped to a specific address location, allowing quick access and retrieval of data.

The device also uses error detection and correction technologies to ensure that any memory errors are detected and rectified. The device features an ECC (error correction code) to detect and fix up to 10 errors per word in the memory array. This provides reliable and secure data storage, ensuring the accuracy and integrity of data stored in the memory.

Conclusion

The 71V016SA12BFGI is a powerful and versatile static random access memory device that offers a vast range of features and benefits across numerous applications. It is ideal for low power embedded systems, and applications that require quick access and retrieval of data, such as machine learning and signal processing. It is also capable of error detection and correction to ensure reliable and secure storage of data.

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