71V124SA10PHG8 Allicdata Electronics
Allicdata Part #:

800-1455-2-ND

Manufacturer Part#:

71V124SA10PHG8

Price: $ 1.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71V124SA10PHG8 datasheet71V124SA10PHG8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.98696
Stock 1000Can Ship Immediately
$ 1.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II
Base Part Number: IDT71V124
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 71V124SA10PHG8 is a high-speed static RAM (SRAM) device that is compatible with JEDEC specs, making it a great choice for markets that require low-power, fast, and reliable memory solutions. This SRAM can operate in temperatures between -40°C and 85°C. It offers a wide range of speeds and capacities, from 4K to 64K by 8. It has several features that make it useful for a wide variety of applications, such as power-fail protection, write-protect, built-in RAM-test logic, and simultaneous read/write capability. It also offers a high speed access time of 10 ns when operating at 5V. With its low power consumption, the 71V124SA10PHG8 is an ideal choice for portable devices and other applications where power consumption and system cost are of concern.

The 71V124SA10PHG8 is a Static RAM (SRAM) device that utilizes a combination of capacitor and transistor cells to store a single bit of data at each addressable location. It uses a combination of two transistors and two capacitors (a 6T SRAM) to store a bit of data. Unlike dynamic RAM (DRAM), the data stored in an SRAM does not periodically have to be refreshed, allowing for faster access time. The bits of data stored in the SRAM can be read, written, and erased at any time.

The 71V124SA10PHG8 is ideal for markets that require low-power, fast, and reliable memory. Its power-fail protection, write-protect, built-in RAM-test logic, and simultaneous read/write capability makes it a great choice for embedded systems, consumer electronics, computer and server products, and automotive, industrial, and medical devices. It can be used to store critical data and programs that need to be accessed quickly and reliably in applications such as portable medical devices, automotive, and industrial applications.

The 71V124SA10PHG8 has many advantages over other types of RAM. One of the main advantages is its low power consumption, which is particularly important for portable devices and other applications where cost and power consumption are of concern. It also has a high speed access time of 10ns when operating at 5V, allowing for faster operation time than other types of RAM. Additionally, its simultaneous read/write capability makes it suitable for applications where simultaneous access to multiple bits of data is required.

In summary, the 71V124SA10PHG8 is a great choice for markets that require low-power, fast, and reliable memory solutions. With its low power consumption, high speed access time, simultaneous read/write capability, and power-fail protection, it is an ideal choice for embedded systems, consumer electronics, computer and server products, and automotive, industrial, and medical devices.

The specific data is subject to PDF, and the above content is for reference

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