71V124SA10YG8 Allicdata Electronics
Allicdata Part #:

800-1456-2-ND

Manufacturer Part#:

71V124SA10YG8

Price: $ 1.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71V124SA10YG8 datasheet71V124SA10YG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.98696
Stock 1000Can Ship Immediately
$ 1.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71V124
Description

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71V124SA10YG8 Memory

The 71V124SA10YG8 memory component is a static field effect transistor (FET) based random access memory (RAM) device. This device is often found in various system designs, including industrial, automotive, and medical. It is used in these systems to store data, and is an important component for memory management.

Applications

The 71V124SA10YG8 memory component is most commonly found in automotive systems, where it is used for safety and efficiency. It is used to store data related to engine and driver inputs and is used to improve the performance and reliability of the system. In addition, this memory component is used in industrial and medical applications, as well as consumer electronics devices. It is often used in powerful portable devices to store essential data and improve the performance of the system.

Working Principle

The 71V124SA10YG8 memory component is a static RAM device. It uses FETs to create circuit elements on the memory die. The FETs are configured in an array, which is then connected to the address and data lines. When an address is specified, the FETs respond by allowing the storage of data at that address. The read and write operations take place at the individual bit level. When a read or write operation is requested, the memory array identifies the specific address and then either reads or stores the data.

Conclusion

The 71V124SA10YG8 memory component is an important part of many systems, including automotive, industrial, and medical devices. It is used to improve performance and reliability, and to store essential data related to the system. As a static RAM device, it is configured using FETs and is capable of reading and writing data at the individual bit level. With its wide range of applications, the 71V124SA10YG8 memory component is an essential part of modern system designs.

The specific data is subject to PDF, and the above content is for reference

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