71V124SA12TYGI8 Allicdata Electronics
Allicdata Part #:

71V124SA12TYGI8-ND

Manufacturer Part#:

71V124SA12TYGI8

Price: $ 1.13
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71V124SA12TYGI8 datasheet71V124SA12TYGI8 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.03631
Stock 1000Can Ship Immediately
$ 1.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71V124
Description

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memory is an indispensable part in any computing system, as all computing operations are generally based on the load, store and manipulate of data. Memory devices can store and provide fast access to a large volume of information, and are divided into two major categories – volatile and non-volatile. Volatile memories, such as Static Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM) are capable of holding data only when power is applied, while non-volatile memories such as ROM, EPROM and EEPROM can retain data even when the power is off.

71V124SA12TYGI8 is a low-voltage, 1Mbit static random access memory (SRAM) which is ideal for embedded applications. This memory device is fabricated by Field-Effect Transistor (FET) based complementary metal-oxide-semiconductor (CMOS) technology and has a capacity of 128K × 8-bit. It is available in a 24-pin dual in-line package (DIP24) with an access time of 10ns, maximum clock frequency of 333MHz, power dissipation of 50mW, and operating temperature range of 0~70℃.

The 71V124SA12TYGI8 works in three major stages – address latch, data read/write and data latch. In the address latch stage, the address is latched in the sense amplifier. Then, in the data read/write stage, the data is read from or written to the memory cell which has been identified by the address latency. Finally, in the data latch stage, the data that is read will be latched onto the output pad. In the 71V124SA12TYGI8, the device is always in a read operation and multiplexed data bus reduces the number of required control signals and simplifies interfacing.

The 71V124SA12TYGI8 is widely used in many areas due to its high speed and fast data access capability. These include automotive and industrial applications, portable applications such as handheld devices, and embedded systems. In automotive systems, the 71V124SA12TYGI8 can be used for engine control and body control modules. In industrial applications, this memory device can be used for programmable controllers and interface devices in automated machines. In handheld devices, such as digital cameras and cell phones, this chip can be used for storing and processing images and data. Finally, in embedded systems, this chip can be used for data storage and signal processing applications.

The 71V124SA12TYGI8 combines a high speed and low power dissipation in a convenient package, making it an ideal solution for a variety of memory applications. This memory device is easy to install, configure and maintain and provides an efficient way to store and process data. In addition, this chip is robust and can withstand high temperatures, making it suitable for automotive and industrial uses. Furthermore, the chip supports both volatile and non-volatile memory operations, enabling it to retain data across system reboots or power cycles.

The specific data is subject to PDF, and the above content is for reference

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