71V124SA15PHG8

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

As one type of integrated circuit, memory can be applied in various devices. Here comes the 71V124SA15PHG8 which is a kind of synchronous static random access memory (SRAM). It is composed of 1,2,4 or 8K memory bits arranged in 256 or 512 words by 8 bits.The memory cells are non-volatile, static, and integrated using CMOS technology.

Overview

This device has a standard CMOS power supply voltage range of 4.5V to 5.5V and an access time of 15ns. The access speed can reach up to 150MHz at 3V. It also has a data retention voltage of 2.0V to 3.6V. The standby current consumption is up to 5.5mA, achieving low power consumption in the operating state.

Features

• Programmable Output Enable (OE) Delay
• Programmable Burst Mode
• Bypass Data Bus Mode
• High speed operation with 15ns access
• Asynchronous output enable (OE) control
• High reliability system design
• High noise immunity up to 10,000V ESD protection

Applications

The 71V124SA15PHG8 can be found in a wide range of applications. In communications, it is mostly applied in network equipment like routers and switches. In datacenter applications, it is usually used in server memory. In consumer electronics, it can be found in automotive infotainment systems

Working Principle

The 71V124SA15PHG8 is a synchronous static random access memory. It consists of a multilayered array of static registers in which the data are stored. Data is encoded in the form of voltages applied to the word lines and bit lines. When a word line voltage is applied to the selected word line, the data stored in the register (cells) of that word line can be read. The data output holds on the data bus until the next operation. The device is write enabled if the write enable voltage is applied to the write enable line.

The device also has a burst mode. When this mode is enabled, data can be read in a series of sequential bursts. This is done with the help of an address pointer. The address pointer keeps track of the addresses being accessed and is incremented each time a data burst is read from the memory.This makes it possible to read large blocks of data very quickly.

Conclusion

The 71V124SA15PHG8 is a synchronous static random access memory device which can be used in different applications due to its features. Its operation can be enabled through the write enable voltage applied to the write enable line and it can also be operated in burst mode by using an address pointer. It is a reliable and durable device, with high noise immunity and up to 10,000V ESD protection.

The specific data is subject to PDF, and the above content is for reference