Allicdata Part #: | 8ETH03-1-ND |
Manufacturer Part#: |
8ETH03-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 300V 8A TO262 |
More Detail: | Diode Standard 300V 8A Through Hole TO-262 |
DataSheet: | 8ETH03-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FRED Pt® |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 20µA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 8ETH03 |
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8ETH03-1 Application Field and Working Principle
Introduction
8ETH03-1 is a rectifier diode from Toshiba Semiconductor. It is specifically designed for unipolar signal switching applications such as inverters, choppers, gate drivers, converters and regulators. 8ETH03-1 is Multi-Voltage Compatible, meaning it is designed to operate at more than one voltage, making it versatile for many applications.
Specifications
The 8ETH03-1 operates from a direct-current voltage range from -40V to -100V. Its forward current is rated at 1A while the reverse leakage current is rated at 10uA. Its forward voltage is rated at 0.72V and the reverse recovery time is 2.0μs. The 8ETH03-1 has a breakdown voltage rated at 15-20KV. The power dissipation is rated at 1.5W and its Mounting is a Through Hole package type.
Application Field
Due to its fast switching speed, low power dissipation, and high breakdown voltage, the 8ETH03-1 is ideal for using in high switching frequency inverters and choppers. It is also suitable for use as a The other applications for the 8ETH03-1 include AC and DC to DC converters, Switched Mode Power Supplies (SMPS), and transistors and diodes switching.
Working Principle
The 8ETH03-1 is a rectifying diode; this means that it allows the current to flow in one direction but not in the opposite direction. When the voltage across the 8ETH03-1 is higher than its breakdown voltage, it begins to conduct current. This is known as Forward Biasing and is the normal operating state of a rectifying diode. When the voltage across the 8ETH03-1 reverse biases it, the diode blocks current flow. This phenomenon is known as Reverse Biasing.
In Forward Biasing, the 8ETH03-1 produces a very small Voltage Drop, usually around 0.7V. As a consequence, most of the voltage provided to it is maintained across the load. In Reverse Biasing, the 8ETH03-1 acts as an open switch, blocking current from entering its anode. This allows sensitive components connected to it to remain protected from damage caused by transient voltage spikes.
Conclusion
The 8ETH03-1 is an ultrafast rectifying diode suitable for various applications, such as inverters, choppers, gate drivers, converters and regulators. It has a low forward voltage drop and withstands high breakdown voltages. The 8ETH03-1 is especially advantageous in high switching frequency inverters and choppers, as it is capable of switching quickly with low power dissipation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-8ETH03PBF | Vishay Semic... | 0.83 $ | 1788 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH06-1HM3 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06SHM3 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06HN3 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06FPPBF | Vishay Semic... | 1.34 $ | 800 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06STRLHM3 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06STRRHM3 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH03-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 300V 8A TO220A... |
VS-8ETH03-1-M3 | Vishay Semic... | 0.64 $ | 995 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH03S-M3 | Vishay Semic... | 0.64 $ | 1000 | DIODE ULTRA FAST 300V 8A ... |
VS-8ETH06-M3 | Vishay Semic... | 0.67 $ | 1000 | DIODE FRED 600V 8A TO220A... |
VS-8ETH06SPBF | Vishay Semic... | 1.14 $ | 808 | DIODE GEN PURP 600V 8A D2... |
VS-8ETH06PBF | Vishay Semic... | 1.16 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06FP-N3 | Vishay Semic... | 1.35 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH03-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH03STRLPBF | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH03STRRPBF | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH06STRLPBF | Vishay Semic... | 0.68 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06STRRPBF | Vishay Semic... | 0.68 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH03-1PBF | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH06-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETH03-1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
8ETH03S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A D2... |
8ETH06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETH03 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
8ETH06-1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETH06S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A D2... |
VS-8ETH03SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE ULTRA FAST 300V 8A ... |
VS-8ETH06-1PBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
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