Allicdata Part #: | 8ETH03S-ND |
Manufacturer Part#: |
8ETH03S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 300V 8A D2PAK |
More Detail: | Diode Standard 300V 8A Surface Mount D2PAK |
DataSheet: | 8ETH03S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FRED Pt® |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 20µA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 8ETH03 |
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.The 8ETH03S is a silicon planar diffused power diode containing two die in a single package. It is used to achieve a wide range of functions such as rectification, clamping, switching, level shifting, protection, isolation and other control functions. This device provides an efficient means for controlling current in a wide variety of electronic applications.
The 8ETH03S is a single-phase rectifier diode, specifically designed for high-speed switching applications such as high-frequency switching, low-voltage level shifting, motor control, and other related applications. It is designed for average current applications and can be used for both ac and dc applications. It has a low forward voltage drop and a fast recovery time, making it an ideal device for voltage regulator applications.
The 8ETH03S is a low-cost solution for controlling current. It features a low on resistance, low forward voltage drop, and a fast recovery time. Its low forward voltage drop helps reduce power loss. Additionally, its fast recovery time makes it ideal for switching applications, as it allows quick response time.
The device is composed of two identical die, which are simultaneously turned on or off by applying a voltage across the device body. This is achieved by applying a voltage between the anode (positive) terminal and the source (negative) terminal. When the applied voltage is below the threshold set by the voltage divider, the device stays off. When the applied voltage reaches or exceeds the threshold voltage, the device turns on, allowing current to flow.
The 8ETH03S can be used in multiple configurations. In most applications, the device is used in a full-wave rectification configuration, where it acts as a bridge between the source and the load. It can also be used as an isolator or level shifter.
In single-phase rectification applications, the 8ETH03S is connected in series with a transformer. The output is generated by rectifying the ac component of the input. This device also allows for low-frequency Pulse Width Modulation techniques, effectively replacing transistors in low-speed switching applications.
The 8ETH03S is used in a variety of applications, ranging from power management and protection applications to current control in high-speed switching applications. It offers an efficient and economical solution for current control while maintaining a low forward voltage drop and fast recovery time.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-8ETH03PBF | Vishay Semic... | 0.83 $ | 1788 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH06-1HM3 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06SHM3 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06HN3 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06FPPBF | Vishay Semic... | 1.34 $ | 800 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06STRLHM3 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06STRRHM3 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH03-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 300V 8A TO220A... |
VS-8ETH03-1-M3 | Vishay Semic... | 0.64 $ | 995 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH03S-M3 | Vishay Semic... | 0.64 $ | 1000 | DIODE ULTRA FAST 300V 8A ... |
VS-8ETH06-M3 | Vishay Semic... | 0.67 $ | 1000 | DIODE FRED 600V 8A TO220A... |
VS-8ETH06SPBF | Vishay Semic... | 1.14 $ | 808 | DIODE GEN PURP 600V 8A D2... |
VS-8ETH06PBF | Vishay Semic... | 1.16 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06FP-N3 | Vishay Semic... | 1.35 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH03-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH03STRLPBF | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH03STRRPBF | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH06STRLPBF | Vishay Semic... | 0.68 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH06STRRPBF | Vishay Semic... | 0.68 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETH03-1PBF | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
VS-8ETH06-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETH03-1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
8ETH03S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A D2... |
8ETH06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETH03 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
8ETH06-1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETH06S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A D2... |
VS-8ETH03SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE ULTRA FAST 300V 8A ... |
VS-8ETH06-1PBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
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